STD40NF3LLT4 STMicroelectronics, STD40NF3LLT4 Datasheet

MOSFET N-CH 30V 40A DPAK

STD40NF3LLT4

Manufacturer Part Number
STD40NF3LLT4
Description
MOSFET N-CH 30V 40A DPAK
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STD40NF3LLT4

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
11 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
40A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
33nC @ 4.5V
Input Capacitance (ciss) @ Vds
1650pF @ 25V
Power - Max
80W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0115 Ohms
Forward Transconductance Gfs (max / Min)
23 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
40 A
Power Dissipation
80 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

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Part Number
Manufacturer
Quantity
Price
Part Number:
STD40NF3LLT4
Manufacturer:
ST
Quantity:
12 500
Part Number:
STD40NF3LLT4
Manufacturer:
ST
0
Part Number:
STD40NF3LLT4 Z4
Manufacturer:
ST
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Order codes
General features
Description
This application specific Power MOSFET is the
third generation of STMicroelectronics unique
"Single Feature Size™" strip-based process. The
resulting transistor shows the best trade-off
between on-resistance and gate charge. When
used as high and low side in buck regulators, it
gives the best performance in terms of both
conduction and switching losses. This is
extremely important for motherboards where fast
switching and high efficiency are of paramount
importance.
Applications
February 2007
STD40NF3LL
Logic level device
Optimal R
Conduction losses reduced
Switching losses reduced
Low threshold drive
Switching application
Type
STD40NF3LLT4
Part number
DS(on)
x Q
V
30V
DSS
g
trade-off
Low gate charge STripFET™ II Power MOSFET
<0.011Ω
R
DS(on)
D40NF3LL@
Marking
40A
I
N-channel 30V - 0.009Ω - 40A - DPAK
D
Rev 5
Internal schematic diagram
Package
DPAK
STD40NF3LL
DPAK
1
3
Tape & reel
Packaging
www.st.com
1/13
13

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STD40NF3LLT4 Summary of contents

Page 1

... Applications ■ Switching application Order codes Part number STD40NF3LLT4 February 2007 N-channel 30V - 0.009Ω - 40A - DPAK Low gate charge STripFET™ II Power MOSFET R I DS(on) D <0.011Ω ...

Page 2

Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

STD40NF3LL 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Drain-source voltage ( Drain-gate voltage (R DGR V Gate- source voltage GS (1) I Drain current (continuous Drain current (continuous ...

Page 4

Electrical characteristics 2 Electrical characteristics (T =25°C unless otherwise specified) CASE Table 3. On/off states Symbol Drain-source V (BR)DSS breakdown voltage Zero gate voltage I DSS drain current (V Gate-body leakage I GSS current (V V Gate threshold voltage GS(th) ...

Page 5

STD40NF3LL Table 5. Source drain diode Symbol Source-drain current I SD Source-drain current (1) I SDM (pulsed) (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1. Pulse ...

Page 6

Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 3. Output characteristics Figure 5. Transconductance 6/13 Figure 2. Thermal impedance Figure 4. Transfer characteristics Figure 6. Static drain-source on resistance STD40NF3LL ...

Page 7

STD40NF3LL Figure 7. Gate charge vs. gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs. temperature Figure 11. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 10. Normalized on resistance vs. temperature Figure 12. Normalized breakdown voltage ...

Page 8

Test circuit 3 Test circuit Figure 13. Switching times test circuit for resistive load Figure 15. Test circuit for inductive load switching and diode recovery times Figure 17. Unclamped inductive waveform 8/13 Figure 14. Gate charge test circuit Figure 16. ...

Page 9

STD40NF3LL 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the ...

Page 10

Package mechanical data DIM (L1 10/13 DPAK MECHANICAL DATA mm. MIN. TYP MAX. 2.2 2.4 0.9 1.1 0.03 0.23 0.64 0.9 ...

Page 11

STD40NF3LL 5 Packing mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE MECHANICAL DATA mm DIM. MIN. A0 6 1.5 D1 1.5 E 1.65 F 7.4 K0 2.55 P0 3.9 P1 7.9 P2 1.9 R ...

Page 12

Revision history 6 Revision history Table 6. Revision history Date 21-Jun-2004 11-Jul-2006 20-Feb-2007 12/13 Revision New datasheet according to PCN DSG/CT/2C13 3 marking:D40NF3LL@ 4 New template, no content change 5 Typo mistake on page 1 STD40NF3LL Changes ...

Page 13

... STD40NF3LL Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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