IRFR3607PBF International Rectifier, IRFR3607PBF Datasheet
IRFR3607PBF
Specifications of IRFR3607PBF
Available stocks
Related parts for IRFR3607PBF
IRFR3607PBF Summary of contents
Page 1
... Ã IRFR3607PbF IRFU3607PbF HEXFET Power MOSFET V D DSS R typ. DS(on) max (Silicon Limited (Package Limited D-Pak I-Pak IRFR3607PbF IRFU3607PbF G D Gate Drain Max. ™ 80 ™ 310 140 0.96 ± - 175 300 120 46 14 Typ. Max. ––– 1.045 ––– ...
Page 2
Static @ T = 25°C (unless otherwise specified) J Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS I ...
Page 3
VGS TOP 15V 10V 8.0V 6.0V 5.5V 5.0V 100 4.8V BOTTOM 4.5V 4.5V 10 ≤ 60µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 T J ...
Page 4
175° 25°C 1 0.1 0.0 0.5 1 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 80 70 Limited By Package ...
Page 5
D = 0.50 0.20 0.10 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.00 1E-006 Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Duty Cycle = Single Pulse 100 0.01 10 0.05 0.10 1 ...
Page 6
100µA 2 250µA 2 1.0mA 1.0A 1.5 1.0 -75 -50 - 100 125 150 175 200 Temperature ...
Page 7
D.U.T + ƒ ‚ - R • • • SD • Fig 20 D.U 20V V GS 0.01 Ω Fig 21a. Unclamped Inductive Test Circuit ...
Page 8
5 8 ,5)5 $ ,5)5 www.irf.com ...
Page 9
5 www.irf.com ,5)8 $ ,5)8 9 ...
Page 10
NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS TO ...