IRFR3607PBF International Rectifier, IRFR3607PBF Datasheet - Page 4

• Manufacturer Part Number: IRFR3607PBF
• Description: MOSFET N-CH 75V 80A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFR3607PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 46A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 100µA
• Gate Charge (qg) @ Vgs: 84nC @ 10V
• Input Capacitance (ciss) @ Vds: 3070pF @ 50V
• Power - Max: 140W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 56A
• Drain Source Voltage Vds: 75V
• On Resistance Rds(on): 7.34mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 4V
• Transistor Case Style: D-PAK
• Rohs Compliant: Yes
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 140 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 56 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig 7. Typical Source-Drain Diode Forward Voltage
4
1000
Fig 9. Maximum Drain Current vs. Case Temperature
1.20
1.00
0.80
0.60
0.40
0.20
0.00
100
0.1
80
70
60
50
40
30
20
10
10
1
0
-10
0.0
25
T J = 175°C
Fig 11. Typical C
0
V DS, Drain-to-Source Voltage (V)
V SD , Source-to-Drain Voltage (V)
50
T C , Case Temperature (°C)
10
0.5
75
20
30
T J = 25°C
100
1.0
Limited By Package
40
OSS
125
50
Stored Energy
1.5
V GS = 0V
60
150
70
175
2.0
80
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
1000
500
450
400
350
300
250
200
150
100
100
100
95
90
85
80
75
70
50
10
0
1
Fig 10. Drain-to-Source Breakdown Voltage
Fig 8. Maximum Safe Operating Area
-60 -40 -20 0 20 40 60 80 100120140160180
25
1
Tc = 25°C
Tj = 175°C
Single Pulse
Id = 5mA
Starting T J , Junction Temperature (°C)
V DS , Drain-to-Source Voltage (V)
50
T J , Temperature ( °C )
OPERATION IN THIS AREA
LIMITED BY R DS (on)
75
DC
1msec
100
10
10msec
100µsec
TOP
BOTTOM 46A
125
150
I D
5.6A
11A
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175
100