IRFR3607PBF International Rectifier, IRFR3607PBF Datasheet - Page 8

• Manufacturer Part Number: IRFR3607PBF
• Description: MOSFET N-CH 75V 80A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFR3607PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 46A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 100µA
• Gate Charge (qg) @ Vgs: 84nC @ 10V
• Input Capacitance (ciss) @ Vds: 3070pF @ 50V
• Power - Max: 140W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 56A
• Drain Source Voltage Vds: 75V
• On Resistance Rds(on): 7.34mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 4V
• Transistor Case Style: D-PAK
• Rohs Compliant: Yes
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 140 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 56 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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