IRFR3607PBF International Rectifier, IRFR3607PBF Datasheet - Page 3

• Manufacturer Part Number: IRFR3607PBF
• Description: MOSFET N-CH 75V 80A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFR3607PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 46A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 100µA
• Gate Charge (qg) @ Vgs: 84nC @ 10V
• Input Capacitance (ciss) @ Vds: 3070pF @ 50V
• Power - Max: 140W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 56A
• Drain Source Voltage Vds: 75V
• On Resistance Rds(on): 7.34mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 4V
• Transistor Case Style: D-PAK
• Rohs Compliant: Yes
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 140 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 56 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
100000
10000
1000
1000
1000
100
100
100
0.1
10
10
1
1
0.1
Fig 3. Typical Transfer Characteristics
1
2
Fig 1. Typical Output Characteristics
TOP
BOTTOM
T J = 175°C
C oss
C iss
C rss
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
3
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
1
4
4.5V
f = 1 MHZ
10
≤ 60µs PULSE WIDTH
Tj = 25°C
V DS = 25V
≤ 60µs PULSE WIDTH
5
T J = 25°C
10
6
7
100
100
8
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
Fig 4. Normalized On-Resistance vs. Temperature
1000
12.0
10.0
100
3.0
2.5
2.0
1.5
1.0
0.5
8.0
6.0
4.0
2.0
0.0
10
0.1
-60 -40 -20 0 20 40 60 80 100120140160180
0
Fig 2. Typical Output Characteristics
TOP
BOTTOM
I D = 46A
I D = 80A
V GS = 10V
V DS , Drain-to-Source Voltage (V)
10
T J , Junction Temperature (°C)
Q G , Total Gate Charge (nC)
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
20
1
V DS = 24V
V DS = 15V
4.5V
30
≤ 60µs PULSE WIDTH
Tj = 175°C
10
40
50
100
60
3