STD5NM60-1 STMicroelectronics, STD5NM60-1 Datasheet - Page 6

• Manufacturer Part Number: STD5NM60-1
• Description: MOSFET N-CH 650V 5A IPAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STD5NM60-1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1 Ohm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 400pF @ 25V
• Power - Max: 96W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical characteristics
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Figure 8.
Figure 10. Transconductance
Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations
Output characteristics
Figure 9.
Figure 11. Static drain-source on resistance
Transfer characteristics
STP8NM60, STD5NM60, STB8NM60