STB6NK60ZT4 STMicroelectronics, STB6NK60ZT4 Datasheet

MOSFET N-CH 600V 6A D2PAK

STB6NK60ZT4

Manufacturer Part Number
STB6NK60ZT4
Description
MOSFET N-CH 600V 6A D2PAK
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet

Specifications of STB6NK60ZT4

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.2 Ohm @ 3A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
6A
Vgs(th) (max) @ Id
4.5V @ 100µA
Gate Charge (qg) @ Vgs
46nC @ 10V
Input Capacitance (ciss) @ Vds
905pF @ 25V
Power - Max
110W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Transistor Polarity
N Channel
Continuous Drain Current Id
3A
Drain Source Voltage Vds
600V
On Resistance Rds(on)
1ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3.75V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
1.2 Ohms
Forward Transconductance Gfs (max / Min)
5 S
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
6 A
Power Dissipation
110 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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STB6NK60ZT4
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Quantity:
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Part Number:
STB6NK60ZT4
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Features
Application
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Table 1.
November 2007
STP6NK60ZFP
STB6NK60Z-1
STB6NK60Z
STP6NK60Z
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Switching applications
Type
STP6NK60ZFP
STB6NK60Z-1
Order codes
STB6NK60Z
STP6NK60Z
N-channel 600 V - 1 Ω - 6 A - TO-220/TO-220FP/D
Device summary
600 V
600 V
600 V
600 V
V
DSS
R
< 1.2 Ω 6 A
< 1.2 Ω 6 A
< 1.2 Ω 6 A
< 1.2 Ω 6 A
Zener-Protected SuperMESH™ Power MOSFET
DS(on)
P6NK60ZFP
B6NK60Z
B6NK60Z
P6NK60Z
Marking
I
D
110 W
110 W
110 W
30 W
P
STP6NK60ZFP - STP6NK60Z
W
STB6NK60Z - STB6NK60Z-1
Rev 8
Figure 1.
TO-220FP
Package
TO-220
D²PAK
I²PAK
TO-220
I²PAK
Internal schematic diagram
1
1 2
2
3
3
2
Tape & reel
Packaging
PAK/I
D²PAK
TO-220FP
Tube
Tube
Tube
1
3
www.st.com
2
1
PAK
2
3
1/17
17

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STB6NK60ZT4 Summary of contents

Page 1

N-channel 600 Ω TO-220/TO-220FP/D Zener-Protected SuperMESH™ Power MOSFET Features Type V R DSS < 1.2 Ω STB6NK60Z 600 V < 1.2 Ω STB6NK60Z-1 600 V < 1.2 Ω 6 ...

Page 2

Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

STB6NK60Z - STB6NK60Z-1 - STP6NK60ZFP - STP6NK60Z 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS I Drain current (continuous Drain current (continuous (2) ...

Page 4

Electrical characteristics 2 Electrical characteristics (T =25°C unless otherwise specified) CASE Table 5. On/off states Symbol Drain-source V (BR)DSS breakdown voltage Zero gate voltage I DSS drain current (V Gate-body leakage I GSS current (V V Gate threshold voltage GS(th) ...

Page 5

STB6NK60Z - STB6NK60Z-1 - STP6NK60ZFP - STP6NK60Z Table 7. Switching times Symbol t d(on) Turn-on delay time t Rise time r t Turn-off delay time d(off) Fall time t f Table 8. Source drain diode Symbol I Source-drain current SD ...

Page 6

Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220/ I²PAK/ D²PAK Figure 4. Safe operating area for TO-220FP Figure 6. Output characteristics 6/17 STB6NK60Z - STB6NK60Z-1 - STP6NK60ZFP - STP6NK60Z Figure 3. Thermal impedance for TO-220/ ...

Page 7

STB6NK60Z - STB6NK60Z-1 - STP6NK60ZFP - STP6NK60Z Figure 8. Transconductance Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations Figure 12. Normalized gate threshold voltage vs temperature Electrical characteristics Figure 9. Static drain-source on resistance Figure 13. Normalized ...

Page 8

Electrical characteristics Figure 14. Source-drain diode forward characteristics Figure 16. Maximum avalanche energy vs temperature 8/17 STB6NK60Z - STB6NK60Z-1 - STP6NK60ZFP - STP6NK60Z Figure 15. Normalized B vs temperature VDSS ...

Page 9

STB6NK60Z - STB6NK60Z-1 - STP6NK60ZFP - STP6NK60Z 3 Test circuit Figure 17. Switching times test circuit for resistive load Figure 19. Test circuit for inductive load switching and diode recovery times Figure 21. Unclamped inductive waveform Figure 18. Gate charge ...

Page 10

Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and ...

Page 11

STB6NK60Z - STB6NK60Z-1 - STP6NK60ZFP - STP6NK60Z Dim L20 L30 ∅P Q TO-220 mechanical data mm Min Typ Max 4.40 4.60 0.61 0.88 1.14 1.70 0.49 ...

Page 12

Package mechanical data DIM Ø 12/17 STB6NK60Z - STB6NK60Z-1 - STP6NK60ZFP - STP6NK60Z TO-220FP MECHANICAL DATA mm. MIN. TYP MAX. 4.4 4.6 2.5 2.7 ...

Page 13

STB6NK60Z - STB6NK60Z-1 - STP6NK60ZFP - STP6NK60Z DIM TO-262 (I PAK) MECHANICAL DATA mm. MIN. TYP MAX. 4.40 4.60 2.40 2.72 0.61 0.88 1.14 1.70 0.49 ...

Page 14

Package mechanical data DIM 14/17 STB6NK60Z - STB6NK60Z-1 - STP6NK60ZFP - STP6NK60Z 2 D PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. MIN. ...

Page 15

STB6NK60Z - STB6NK60Z-1 - STP6NK60ZFP - STP6NK60Z 5 Packing mechanical data 2 D PAK FOOTPRINT TAPE MECHANICAL DATA mm DIM. MIN. MAX. A0 10.5 10.7 B0 15.7 15.9 D 1.5 1.6 D1 1.59 1.61 E 1.65 1.85 F 11.4 11.6 ...

Page 16

Revision history 6 Revision history Table 10. Document revision history Date 14-Jan-2004 23-Aug-2005 04-Oct-2005 23-May-2007 22-Nov-2007 16/17 STB6NK60Z - STB6NK60Z-1 - STP6NK60ZFP - STP6NK60Z Revision 4 Initial electronic version 5 Inserted ecopack label 6 Modified header 7 Added Figure 16: ...

Page 17

... STB6NK60Z - STB6NK60Z-1 - STP6NK60ZFP - STP6NK60Z Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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