STU10NM60N STMicroelectronics, STU10NM60N Datasheet - Page 5

• Manufacturer Part Number: STU10NM60N
• Description: MOSFET N-CH 600V 8A IPAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STU10NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 550 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Input Capacitance (ciss) @ Vds: 540pF @ 50V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak (3 straight short leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
Table 7.
Table 8.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
I
I
d(on)
d(off)
SD
RRM
RRM
I
Q
Q
SD
t
t
t
t
rr
rr
r
f
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
Doc ID 15764 Rev 5
V
R
(see Figure 16)
I
I
V
(see Figure 18)
I
V
(see Figure 18)
SD
SD
SD
DD
G
DD
DD
= 4.7 Ω, V
= 8 A, V
= 8 A, di/dt = 100 A/µs
= 8 A, di/dt = 100 A/µs
= 300 V, I
= 60 V
= 60 V T
Test conditions
Test conditions
GS
J
GS
D
= 150 °C
= 0
= 4 A,
= 10 V
Electrical characteristics
Min.
Min. Typ. Max Unit
-
-
-
-
-
Typ.
2.12
16.5
10
12
32
15
250
315
2.6
17
Max Unit
1.3
32
8
-
µC
µC
ns
ns
ns
ns
ns
ns
5/17
A
A
V
A
A