STF60N55F3 STMicroelectronics, STF60N55F3 Datasheet - Page 5

• Manufacturer Part Number: STF60N55F3
• Description: MOSFET N-CH 55V 42A TO-220FP
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STF60N55F3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8.5 mOhm @ 32A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 42A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Input Capacitance (ciss) @ Vds: 2200pF @ 25V
• Power - Max: 30W
• Mounting Type: Through Hole
• Package / Case: TO-220FP
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0085 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 42 A
• Power Dissipation: 30 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Fall Time: 11.5 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 50 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

STx60N55F3
Table 7.
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Symbol
I
I
SDM
SDM
I
V
RRM
I
I
Q
SD
SD
t
SD
rr
rr
(1)
(1)
Source-drain current
Source-drain current (pulsed)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
I
I
di/dt = 100A/µs,
Tj = 150°C
(see Figure 17)
SD
SD
Doc ID 13242 Rev 4
Test conditions
= 65A, V
= 65A, V
GS
DD
= 0
= 30V
DPAK-D
I
2
Packages
TO-220FP
PAK-I
TO-220
2
2
PAK-
PAK-
Electrical characteristics
Min.
-
-
-
-
Typ.
3.7
47
87
Max.
320
168
1.5
80
42
Unit
nC
ns
5/20
A
A
A
A
V
A