IRL3705ZSPBF International Rectifier, IRL3705ZSPBF Datasheet - Page 3

• Manufacturer Part Number: IRL3705ZSPBF
• Description: MOSFET N-CH 55V 75A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL3705ZSPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 52A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 5V
• Input Capacitance (ciss) @ Vds: 2880pF @ 25V
• Power - Max: 130W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Current, Drain: 75 A
• Gate Charge, Total: 40 nC
• Package Type: D2Pak
• Polarization: N-Channel
• Power Dissipation: 130 W
• Resistance, Drain To Source On: 6.5 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 26 ns
• Time, Turn-on Delay: 17 ns
• Transconductance, Forward: 150 S
• Voltage, Breakdown, Drain To Source: 55 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±16 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRL3705ZSPBF

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1000
1000
0.01
100
100
0.1
0.1
Fig 3. Typical Transfer Characteristics
10
10
Fig 1. Typical Output Characteristics
1
1
0.1
0
2
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
T J = 25°C
2.8V
1
4
6
Tj = 25°C
60µs PULSE WIDTH
10
V DS = 15V
8
60µs PULSE WIDTH
10
T J = 175°C
TOP
BOTTOM
100
12
14
VGS
12V
10V
8.0V
5.0V
4.5V
3.5V
3.0V
2.8V
1000
16
1000
120
100
100
Fig 4. Typical Forward Transconductance
Fig 2. Typical Output Characteristics
80
60
40
20
10
0
1
0.1
0
V DS , Drain-to-Source Voltage (V)
20
I D ,Drain-to-Source Current (A)
vs. Drain Current
1
40
2.8V
Tj = 175°C
60µs PULSE WIDTH
60
10
T J = 25°C
T J = 175°C
80
TOP
BOTTOM
V DS = 8.0V
100
100
VGS
12V
10V
8.0V
5.0V
4.5V
3.5V
3.0V
2.8V
1000
3
120