IRL3705ZSPBF International Rectifier, IRL3705ZSPBF Datasheet - Page 5

• Manufacturer Part Number: IRL3705ZSPBF
• Description: MOSFET N-CH 55V 75A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL3705ZSPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 52A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 5V
• Input Capacitance (ciss) @ Vds: 2880pF @ 25V
• Power - Max: 130W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Current, Drain: 75 A
• Gate Charge, Total: 40 nC
• Package Type: D2Pak
• Polarization: N-Channel
• Power Dissipation: 130 W
• Resistance, Drain To Source On: 6.5 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 26 ns
• Time, Turn-on Delay: 17 ns
• Transconductance, Forward: 150 S
• Voltage, Breakdown, Drain To Source: 55 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±16 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRL3705ZSPBF

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0.001
100
0.01
90
80
70
60
50
40
30
20
10
0.1
0
10
1
1E-006
Fig 9. Maximum Drain Current vs.
25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
D = 0.50
50
0.02
0.20
0.01
0.10
0.05
Case Temperature
T C , Case Temperature (°C)
75
Limited By Package
1E-005
SINGLE PULSE
( THERMAL RESPONSE )
100
125
150
t 1 , Rectangular Pulse Duration (sec)
0.0001
175
J
J
1
Ci= i Ri
1
Ci
2.0
1.5
1.0
0.5
Fig 10. Normalized On-Resistance
i Ri
-60 -40 -20 0
R
0.001
1
R
I D = 43A
V GS = 5.0V
1
2
R
T J , Junction Temperature (°C)
2
2
R
vs. Temperature
2
C
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
20 40 60 80 100 120 140 160 180
Ri (°C/W)
0.5413
0.5985
0.01
0.000384
0.002778
i (sec)
5
0.1