IRL3705ZSPBF International Rectifier, IRL3705ZSPBF Datasheet - Page 7

MOSFET N-CH 55V 75A D2PAK

IRL3705ZSPBF

Manufacturer Part Number
IRL3705ZSPBF
Description
MOSFET N-CH 55V 75A D2PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets

Specifications of IRL3705ZSPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8 mOhm @ 52A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
60nC @ 5V
Input Capacitance (ciss) @ Vds
2880pF @ 25V
Power - Max
130W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Current, Drain
75 A
Gate Charge, Total
40 nC
Package Type
D2Pak
Polarization
N-Channel
Power Dissipation
130 W
Resistance, Drain To Source On
6.5 Milliohms
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
26 ns
Time, Turn-on Delay
17 ns
Transconductance, Forward
150 S
Voltage, Breakdown, Drain To Source
55 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±16 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRL3705ZSPBF
www.irf.com
100
150
125
100
0.1
10
75
50
25
1.0E-05
1
0
Fig 16. Maximum Avalanche Energy
25
0.10
0.05
0.01
Starting T J , Junction Temperature (°C)
50
Duty Cycle = Single Pulse
vs. Temperature
TOP
BOTTOM 1% Duty Cycle
I D = 52A
75
100
Fig 15. Typical Avalanche Current vs.Pulsewidth
1.0E-04
Single Pulse
125
150
175
tav (sec)
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
2. Safe operation in Avalanche is allowed as long asT
3. Equation below based on circuit and waveforms shown in
4. P
5. BV = Rated breakdown voltage (1.3 factor accounts for
6. I
7. T
1.0E-03
t
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T
every part type.
not exceeded.
Figures 12a, 12b.
avalanche pulse.
voltage increase during avalanche).
T
D = Duty cycle in avalanche = t
Z
av =
av
thJC
jmax
D (ave)
= Allowable avalanche current.
=
Average time in avalanche.
(D, t
Allowable rise in junction temperature, not to exceed
(assumed as 25°C in Figure 15, 16).
= Average power dissipation per single
av
P
) = Transient thermal resistance, see figure 11)
D (ave)
= 1/2 ( 1.3·BV·I
I
E
Allowed avalanche Current vs
avalanche
assuming
avalanche losses
av
AS (AR)
= 2DT/ [1.3·BV·Z
1.0E-02
= P
D (ave)
jmax
pulsewidth,
Tj = 25°C due to
av
av
. This is validated for
·f
) = DT/ Z
·t
th
av
]
thJC
tav
jmax
1.0E-01
7
is

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