IRL3705ZSPBF International Rectifier, IRL3705ZSPBF Datasheet - Page 4

• Manufacturer Part Number: IRL3705ZSPBF
• Description: MOSFET N-CH 55V 75A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL3705ZSPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 52A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 5V
• Input Capacitance (ciss) @ Vds: 2880pF @ 25V
• Power - Max: 130W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Current, Drain: 75 A
• Gate Charge, Total: 40 nC
• Package Type: D2Pak
• Polarization: N-Channel
• Power Dissipation: 130 W
• Resistance, Drain To Source On: 6.5 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 26 ns
• Time, Turn-on Delay: 17 ns
• Transconductance, Forward: 150 S
• Voltage, Breakdown, Drain To Source: 55 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±16 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRL3705ZSPBF

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Fig 5. Typical Capacitance vs.
Fig 7. Typical Source-Drain Diode
0.0
1
Drain-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
V SD , Source-to-Drain Voltage (V)
T J = 175°C
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
C iss
C rss
Forward Voltage
C oss
0.5
f = 1 MHZ
T J = 25°C
1.0
10
1.5
V GS = 0V
100
2.0
1000
100
6.0
5.0
4.0
3.0
2.0
1.0
0.0
10
Fig 8. Maximum Safe Operating Area
1
1
0
Fig 6. Typical Gate Charge vs.
Tc = 25°C
Tj = 175°C
Single Pulse
I D = 52A
Gate-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
10
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
V DS = 44V
V DS = 28V
V DS = 11V
20
10msec
100µsec
1msec
100
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30
1000
40