STP11NK50Z STMicroelectronics, STP11NK50Z Datasheet - Page 13

• Manufacturer Part Number: STP11NK50Z
• Description: MOSFET N-CH 500V 10A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP11NK50Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 520 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 68nC @ 10V
• Input Capacitance (ciss) @ Vds: 1390pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 10A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 520mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.52 Ohms
• Forward Transconductance Gfs (max / Min): 77 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 10 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

STB11NK50Z - STP11NK50ZFP - STP11NK50Z
Dim
A1
D1
E1
V2
b2
e1
L1
L2
c2
J1
A
D
E
H
R
b
e
L
c
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
8.50
4.88
2.49
2.29
1.27
1.30
Min
10
15
0°
D²PAK (TO-263) mechanical data
2.54
mm
Typ
0.4
10.40
15.85
Max
4.60
0.23
0.93
1.70
0.60
1.36
9.35
5.28
2.69
2.79
1.40
1.75
8°
0.173
0.001
0.027
0.045
0.017
0.048
0.352
0.295
0.394
0.334
0.192
0.590
0.099
0.090
0.051
0.05
Min
0°
Package mechanical data
0.016
inch
Typ
0.1
0.009
0.067
0.053
0.208
0.106
0.069
0.181
0.037
0.024
0.368
0.409
0.624
0.110
0.055
Max
8°
13/16