MOSFET N-CH 600V 7A TO-220

STP9NK60Z

Manufacturer Part NumberSTP9NK60Z
DescriptionMOSFET N-CH 600V 7A TO-220
ManufacturerSTMicroelectronics
SeriesSuperMESH™
STP9NK60Z datasheet
 


Specifications of STP9NK60Z

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs950 mOhm @ 3.5A, 10VDrain To Source Voltage (vdss)600V
Current - Continuous Drain (id) @ 25° C7AVgs(th) (max) @ Id4.5V @ 100µA
Gate Charge (qg) @ Vgs53nC @ 10VInput Capacitance (ciss) @ Vds1110pF @ 25V
Power - Max125WMounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)Transistor PolarityN Channel
Continuous Drain Current Id3.5ADrain Source Voltage Vds600V
On Resistance Rds(on)850mohmRds(on) Test Voltage Vgs10V
Threshold Voltage Vgs Typ3.75VRohs CompliantYes
ConfigurationSingleResistance Drain-source Rds (on)0.95 Ohms
Drain-source Breakdown Voltage600 VGate-source Breakdown Voltage+/- 30 V
Continuous Drain Current7 APower Dissipation125 W
Maximum Operating Temperature+ 150 CMounting StyleThrough Hole
Minimum Operating Temperature- 55 CLead Free Status / RoHS StatusLead free / RoHS Compliant
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N-CHANNEL 600V - 0.85
Zener-Protected SuperMESH™Power MOSFET
TYPE
V
R
DSS
DS(on)
< 0.95
STP9NK60Z
600 V
< 0.95
STP9NK60ZFP
600 V
STB9NK60Z
600 V
< 0.95
STB9NK60Z-1
600 V
< 0.95
TYPICAL R
(on) = 0.85
DS
EXTREMELY HIGH dv/dt CAPABILITY
IMPROVED ESD CAPABILITY
100% AVALANCHE RATED
GATE CHARGE MINIMIZED
VERY LOW INTRINSIC CAPACITANCES
VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
ORDERING INFORMATION
SALES TYPE
STP9NK60Z
STP9NK60ZFP
STB9NK60Z
STB9NK60ZT4
STB9NK60Z-1
June 2002
STP9NK60Z - STP9NK60ZFP
STB9NK60Z - STB9NK60Z-1
- 7A TO-220/FP/D
I
Pw
D
7 A
125 W
7 A
30 W
7 A
125 W
7 A
125 W
TO-220
INTERNAL SCHEMATIC DIAGRAM
MARKING
PACKAGE
P9NK60Z
TO-220
P9NK60ZFP
TO-220FP
2
B9NK60Z
D
2
B9NK60Z
D
2
B9NK60Z-1
I
2
PAK/I
3
1 2
2
I
PAK
PACKAGING
TUBE
TUBE
TUBE
PAK
TAPE & REEL
PAK
TUBE
PAK
2
PAK
3
2
1
TO-220FP
3
1
2
D
PAK
1/13

STP9NK60Z Summary of contents

  • Page 1

    ... ST full range of high voltage MOSFETs in- cluding revolutionary MDmesh™ products. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC ORDERING INFORMATION SALES TYPE STP9NK60Z STP9NK60ZFP STB9NK60Z STB9NK60ZT4 STB9NK60Z-1 June 2002 STP9NK60Z - STP9NK60ZFP STB9NK60Z - STB9NK60Z TO-220/FP 125 125 125 W ...

  • Page 2

    ... STP9NK60Z / STP9NK60ZFP / STB9NK60Z / STB9NK60Z-1 ABSOLUTE MAXIMUM RATINGS Symbol V Drain-source Voltage ( Drain-gate Voltage (R DGR V Gate- source Voltage GS I Drain Current (continuous Drain Current (continuous Drain Current (pulsed Total Dissipation at T TOT Derating Factor V Gate source ESD(HBM-C=100pF, R=1.5K ESD(G-S) dv/dt (1) Peak Diode Recovery voltage slope ...

  • Page 3

    ... Reverse Recovery Current I RRM Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1 Pulse width limited by safe operating area defined as a constant equivalent capacitance giving the same charging time as C oss eq DSS STP9NK60Z / STP9NK60ZFP / STB9NK60Z / STB9NK60Z-1 Test Conditions mA Max Rating Max Rating, T ...

  • Page 4

    ... STP9NK60Z / STP9NK60ZFP / STB9NK60Z / STB9NK60Z-1 Safe Operating Area For TO-220/D2PAK/I2PAK Thermal Impedance For TO-220/D2PAK/I2PAK Output Characteristics 4/13 Safe Operating Area For TO-220FP Thermal Impedance For TO-220FP Transfer Characteristics ...

  • Page 5

    ... Transconductance Gate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs Temp. STP9NK60Z / STP9NK60ZFP / STB9NK60Z / STB9NK60Z-1 Static Drain-source On Resistance Capacitance Variations Normalized On Resistance vs Temperature 5/13 ...

  • Page 6

    ... STP9NK60Z / STP9NK60ZFP / STB9NK60Z / STB9NK60Z-1 Source-drain Diode Forward Characteristics Maximum Avalanche Energy vs Temperature 6/13 Normalized BVDSS vs Temperature ...

  • Page 7

    ... Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times STP9NK60Z / STP9NK60ZFP / STB9NK60Z / STB9NK60Z-1 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit 7/13 ...

  • Page 8

    ... STP9NK60Z / STP9NK60ZFP / STB9NK60Z / STB9NK60Z-1 DIM. MIN. A 4.40 C 1. 0.49 F 0.61 F1 1.14 F2 1.14 G 4.95 G1 2 13.0 L5 2.65 L6 15.25 L7 6.2 L9 3.5 DIA. 3.75 8/13 TO-220 MECHANICAL DATA mm TYP. MAX. 4.60 1.32 2.72 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 16.4 14 ...

  • Page 9

    ... STP9NK60Z / STP9NK60ZFP / STB9NK60Z / STB9NK60Z-1 TO-220FP MECHANICAL DATA mm. DIM. MIN. A 4.4 B 2.5 D 2.5 E 0.45 F 0.75 F1 1.15 F2 1.15 G 4. 28.6 L4 9.8 L5 2 Ø 3 TYP MAX. MIN. 4.6 0.173 2.7 0.098 2.75 0.098 0.7 0.017 1 0.030 1.5 0.045 1.5 0.045 5.2 0.195 2 ...

  • Page 10

    ... STP9NK60Z / STP9NK60ZFP / STB9NK60Z / STB9NK60Z-1 DIM. MIN. A 4.4 A1 2.49 A2 0.03 B 0.7 B2 1.14 C 0.45 C2 1. 1.27 L3 1 0º 10/ PAK MECHANICAL DATA mm. TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 8 10.4 8.5 5.28 15.85 1.4 1.75 3.2 0.4 8º inch MIN ...

  • Page 11

    ... STP9NK60Z / STP9NK60ZFP / STB9NK60Z / STB9NK60Z-1 TO-262 (I mm DIM. MIN. TYP. A 4.4 A1 2.49 B 0.7 B2 1.14 C 0.45 C2 1.23 D 8. 13.1 L1 3. PAK) MECHANICAL DATA MAX. MIN. 4.6 0.173 2.69 0.098 0.93 0.027 1.7 0.044 0.6 0.017 1.36 0.048 9.35 0.352 2.7 0.094 10 ...

  • Page 12

    ... STP9NK60Z / STP9NK60ZFP / STB9NK60Z / STB9NK60Z PAK FOOTPRINT TAPE AND REEL SHIPMENT (suffix ”T4”)* TAPE MECHANICAL DATA mm inch DIM. MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11 ...

  • Page 13

    ... STP9NK60Z / STP9NK60ZFP / STB9NK60Z / STB9NK60Z-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...