STB30NF20 STMicroelectronics, STB30NF20 Datasheet - Page 7

• Manufacturer Part Number: STB30NF20
• Description: MOSFET N-CH 200V 30A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB30NF20

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 75 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 1597pF @ 25V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.075 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 30 A
• Power Dissipation: 125000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 30A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 0.065ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7946-2; STB30NF20

STP30NF20 - STW30NF20 - STB30NF20
Figure 8.
Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations
Figure 12. Normalized gate threshold voltage
Normalized B
vs temperature
VDSS
vs temperature
Figure 9.
Figure 13. Normalized on resistance vs
Static drain-source on resistance
temperature
Electrical characteristics
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