STB8NM60T4 STMicroelectronics, STB8NM60T4 Datasheet - Page 2

• Manufacturer Part Number: STB8NM60T4
• Description: MOSFET N-CH 650V 8A D2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB8NM60T4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1 Ohm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 400pF @ 25V
• Power - Max: 100W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 8 A
• Power Dissipation: 100000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5386-2; STB8NM60T4

Electrical ratings
1
2/18
Electrical ratings
Table 1.
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I
Table 2.
Table 3.
Symbol
Symbol
R
Symbol
dv/dt
I
SD
P
V
DM
R
V
thj-case
T
E
T
I
I
TOT
I
ISO
GS
thj-a
T
stg
D
D
AS
AS
J
(2)
≤ 5 A, di/dt ≤ 400 A/µs, V
l
(3)
Absolute maximum ratings
Thermal resistance
Avalanche data
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s;T
Operating junction temperature
Storage temperature
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
Single pulse avalanche energy
(starting Tj=25 °C, I
C
=25 °C)
Parameter
DD
Parameter
D
C
= 80%V
=I
= 25 °C
Parameter
AS
, V
(BR)DSS
DD
C
C
=50 V)
=100 °C
= 25 °C
STP8NM60, STD5NM60, STB8NM60
TO-220
D²PAK
TO-220
D²PAK
100
1.25
0.8
32
--
8
5
-55 to 150
TO-220FP
DPAK
IPAK
Value
Value
± 30
1.3
32
62.5
2500
300
0.24
5
15
8
30
(1)
(1)
(1)
Value
200
2.5
TO-220FP
4.16
DPAK
3.1
20
IPAK
0.0.4
96
--
5
(1)
(1)
W/°C
°C/W
°C/W
Unit
V/ns
Unit
Unit
°C
°C
W
mJ
V
A
A
A
V
A