IRF6613 International Rectifier, IRF6613 Datasheet - Page 3

• Manufacturer Part Number: IRF6613
• Description: MOSFET N-CH 40V DIRECTFET-MT
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6613

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.4 mOhm @ 23A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 23A
• Vgs(th) (max) @ Id: 2.25V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 5950pF @ 15V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MT

Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
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1000.0
100000
100.0
10000
1000
1000
10.0
Fig 3. Typical Transfer Characteristics
100
1.0
0.1
100
10
1
Fig 1. Typical Output Characteristics
0.1
1.5
1
T J = 150°C
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
2.0
1
2.7V
Coss
Ciss
Crss
V DS = 15V
≤ 60µs PULSE WIDTH
2.5
≤ 60µs PULSE WIDTH
Tj = 25°C
T J = 25°C
f = 1 MHZ
10
10
TOP
BOTTOM
3.0
VGS
10V
7.0V
4.5V
4.0V
3.5V
3.2V
2.9V
2.7V
100
3.5
100
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 4. Normalized On-Resistance vs. Temperature
2.0
1.5
1.0
0.5
1000
Fig 2. Typical Output Characteristics
100
12
10
10
8
6
4
2
0
-60 -40 -20
0.1
0
I D = 23A
V GS = 10V
I D = 18A
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
20
Q G Total Gate Charge (nC)
0
20
1
40
V DS = 32V
VDS= 20V
40
2.7V
≤ 60µs PULSE WIDTH
Tj = 150°C
60
60
80 100 120 140 160
10
TOP
BOTTOM
80
VGS
10V
7.0V
4.5V
4.0V
3.5V
3.2V
2.9V
2.7V
3
100
100