IRF6613 International Rectifier, IRF6613 Datasheet - Page 6

• Manufacturer Part Number: IRF6613
• Description: MOSFET N-CH 40V DIRECTFET-MT
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6613

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.4 mOhm @ 23A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 23A
• Vgs(th) (max) @ Id: 2.25V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 5950pF @ 15V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MT

DirectFET™ Substrate and PCB Layout, MT Outline
(Medium Size Can, T-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
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D.U.T
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Fig 17.
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D
D
HEXFET
+
V
G
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Power MOSFETs
Re-Applied
Voltage
Reverse
Recovery
Current
S
S
D = DRAIN
G = GATE
S = SOURCE
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
V
P.W.
= 5V for Logic Level Devices
SD
D
D
DS
Waveform
Waveform
for N-Channel
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
Diode Recovery
Current
dv/dt
Forward Drop
di/dt
D =
Period
P.W.
www.irf.com
V
V
I
SD
GS
DD
=10V