IRF6613 International Rectifier, IRF6613 Datasheet - Page 4

• Manufacturer Part Number: IRF6613
• Description: MOSFET N-CH 40V DIRECTFET-MT
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6613

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.4 mOhm @ 23A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 23A
• Vgs(th) (max) @ Id: 2.25V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 5950pF @ 15V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MT

Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 9. Maximum Drain Current vs. Case Temperature
1000.0
4
100.0
150
120
10.0
90
60
30
1.0
0.1
0
25
0.2
0.0001
0.001
0.01
100
0.1
10
1
1E-006
T J = 150°C
0.4
V SD , Source-to-Drain Voltage (V)
T J , Junction Temperature (°C)
50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
D = 0.50
0.6
0.02
0.05
0.01
0.10
0.20
75
1E-005
T J = 25°C
0.8
SINGLE PULSE
( THERMAL RESPONSE )
100
1.0
0.0001
V GS = 0V
125
1.2
1.4
150
t 1 , Rectangular Pulse Duration (sec)
0.001
τ
J
τ
J
τ
1
Ci= τi/Ri
τ
1
Ci
0.01
i/Ri
R
1
R
1
τ
2
R
τ
2
2
R
2
0.1
Fig 10. Threshold Voltage vs. Temperature
1000
2.5
2.0
1.5
1.0
0.5
0.01
R
100
τ
0.1
3
3
10
R
τ
3
1
-75
3
Fig 8. Maximum Safe Operating Area
0
Tc = 25°C
Tj = 150°C
Single Pulse
τ
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
-50
R
4
τ
4
R
4
4
V DS , Drain-toSource Voltage (V)
τ
τ
1
C
-25
τ
Ri (°C/W)
T J , Temperature ( °C )
0.6784
17.299
17.566
9.4701
1
0
OPERATION IN THIS AREA
LIMITED BY R DS (on)
25
10
106
10
0.00086
0.57756
8.94
τi (sec)
50
75
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100µsec
10msec
1msec
I D = 250µA
100
100
100 125
1000
150