IRF6613 International Rectifier, IRF6613 Datasheet - Page 5

• Manufacturer Part Number: IRF6613
• Description: MOSFET N-CH 40V DIRECTFET-MT
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6613

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.4 mOhm @ 23A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 23A
• Vgs(th) (max) @ Id: 2.25V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 5950pF @ 15V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MT

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Fig 13a. Unclamped Inductive Test Circuit
Fig 13b. Unclamped Inductive Waveforms
Fig 12. On-Resistance Vs. Gate Voltage
7.0
6.0
5.0
4.0
3.0
2.0
I
AS
2.0
Fig 15. Gate Charge Test Circuit
R G
12V
20V
V
V DS
V
GS
GS
V GS , Gate-to-Source Voltage (V)
Same Type as D.U.T.
t p
Current Regulator
4.0
.2µF
I AS
D.U.T
50KΩ
3mA
t p
Current Sampling Resistors
0.01 Ω
L
.3µF
6.0
I
G
D.U.T.
I
T J = 125°C
T J = 25°C
D
15V
V
8.0
(BR)DSS
DRIVER
I D = 23A
+
-
V
DS
+
-
V DD
10.0
A
Fig 13c. Maximum Avalanche Energy Vs. Drain Current
90%
V
10%
V
Fig 14a. Switching Time Test Circuit
DS
Fig 14b. Switching Time Waveforms
GS
Fig 16. Gate Charge Waveform
1000
Vgs(th)
Qgs1 Qgs2
800
600
400
200
Vds
0
t
25
d(on)
Duty Factor < 0.1%
Pulse Width < 1µs
Starting T J , Junction Temperature (°C)
V
GS
t
r
Qgd
50
V
DS
75
Qgodr
t
d(off)
D.U.T
L
100
D
t
f
TOP
BOTTOM
V
DD
Vgs
+
-
125
Id
6.7A
8.1A
18A
I D
5
150