IRF6613 International Rectifier, IRF6613 Datasheet - Page 7

• Manufacturer Part Number: IRF6613
• Description: MOSFET N-CH 40V DIRECTFET-MT
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6613

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.4 mOhm @ 23A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 23A
• Vgs(th) (max) @ Id: 2.25V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 5950pF @ 15V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MT

DirectFET™ Part Marking
DirectFET™ Outline Dimension, MT Outline
(Medium Size Can, T-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
www.irf.com
NOTE: CONTROLLING
DIMENSIONS ARE IN MM
CODE
A
B
C
D
E
F
G
H
J
K
L
M
N
P
1.78
MIN
6.25
3.85
0.35
0.78
0.88
0.98
0.63
0.88
0.59
0.03
0.08
4.80
2.46
METRIC
DIMENSIONS
1.82
1.02
1.01
MAX
6.35
5.05
3.95
0.45
0.82
0.92
0.67
2.63
0.70
0.08
0.17
0.246
0.189
0.152
0.014
0.031
0.035
0.070
0.039
0.025
0.035
0.097
0.023
0.001
0.003
MIN
IMPERIAL
0.250
0.199
0.156
0.018
0.032
0.036
0.072
0.040
0.026
0.039
0.104
0.028
0.003
0.007
MAX
7