STP55NF06FP STMicroelectronics, STP55NF06FP Datasheet - Page 3

• Manufacturer Part Number: STP55NF06FP
• Description: MOSFET N-CH 60V 50A TO220FP
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP55NF06FP

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 18 mOhm @ 27.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 1300pF @ 25V
• Power - Max: 30W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 50A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 18mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.015 Ohms
• Forward Transconductance Gfs (max / Min): 18 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 30 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3193-5

STB55NF06 - STB55NF06-1 - STP55NF06 - STP55NF06FP
1
Electrical ratings
Table 1.
1. Refer to soa for the max allowable current value on FP-type due to Rth value
2. Pulse width limited by safe operating area.
3. Starting Tj = 25°C, V
4. I
Table 2.
1. for 10 sec. 1.6mm from case
Rthj-case
Rthj-amb
Symbol
dv/dt
SD
E
I
V
DM
V
V
T
P
AS
T
I
I
T
ISO
≤ 50A, di/dt ≤ 400A/µs, V
GS
DS
stg
J
D
D
tot
j
(2)
(3)
(4)
Absolute maximum ratings
Thermal data
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
Drain-source voltage (V
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating Factor
Single pulse avalanche energy
Peak diode recovery voltage slope
Insulation withstand voltage (DC)
Storage temperature
Max. operating junction temperature
DD
(1)
= 30V, I
DD
≤ V
(BR)DSS
D
Parameter
=25A
C
, Tj ≤ T
= 25°C
GS
= 0)
JMAX
C
C
= 25°C
= 100°C
TO-220
D
I
2
0.73
2
200
110
PAK
50
35
PAK
TO-220
D
-
I
2
1.36
2
PAK
PAK
-55 to 175
Value
± 20
340
60
7
62.5
300
TO-220FP
TO-220FP
Electrical ratings
200
2500
50
35
0.20
30
5
(1)
(1)
(1)
°C/W
°C/W
W/°C
V/ns
Unit
°C
mJ
°C
W
V
V
V
A
A
A
3/18