IRF3710PBF International Rectifier, IRF3710PBF Datasheet - Page 2

• Manufacturer Part Number: IRF3710PBF
• Description: MOSFET N-CH 100V 57A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF3710PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 23 mOhm @ 28A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 57A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 130nC @ 10V
• Input Capacitance (ciss) @ Vds: 3130pF @ 25V
• Power - Max: 200W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Current, Drain: 7.3 A
• Gate Charge, Total: 34 nC
• Package Type: SO-8
• Polarization: N-Channel
• Power Dissipation: 2.5 W
• Resistance, Drain To Source On: 18 Milliohms
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 10 ns
• Time, Turn-on Delay: 8.7 ns
• Transconductance, Forward: 11 S
• Voltage, Breakdown, Drain To Source: 100 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 57 A
• Mounting Style: Through Hole
• Gate Charge Qg: 86.7 nC
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.023Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF3710PBF

Source-Drain Ratings and Characteristics
Electrical Characteristics @ T

‚
Notes:
V
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
E
L
L
I
I
V
t
Q
t
DSS
GSS
SM
d(on)
r
d(off)
f
S
rr
on
V
2
fs
D
S
(BR)DSS
GS(th)
AS
SD
DS(on)
g
gs
gd
iss
oss
rss
rr
Repetitive rating; pulse width limited by
(BR)DSS
max. junction temperature. (See fig. 11)
R
Starting T
G
= 25 , I
/ T
J
J
Drain-to-Source Leakage Current
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Internal Drain Inductance
Internal Source Inductance
= 25°C, L = 0.70mH
AS
= 28A, V
GS

Parameter
Parameter
=10V (See Figure 12)
J
= 25°C (unless otherwise specified)
‚
ƒ
„
…
†
I
Pulse width
This is a typical value at device destruction and represents
T
This is a calculated value limited to T
operation outside rated limits.
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 1060…280†
SD
–––
Min. Typ. Max. Units
2.0
Min. Typ. Max. Units
32
–––
–––
–––
–––
–––
–––
J
Intrinsic turn-on time is negligible (turn-on is dominated by L
175°C
28A di/d
3130 –––
0.13
–––
–––
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
410
670 1010
–––
–––
–––
140
4.5
72
12
58
45
47
7.5
–––
–––
–––
–––
250
100
130
–––
–––
–––
–––
–––
–––
–––
220
4.0
1.2
400µs; duty cycle
23
25
26
43
230
57
380A/µs, V
V/°C
m
µA
nA
nC
ns
nH
mJ
nC
pF
ns
V
V
S
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
I
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
AS
DD
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
J
J
G
= 28A
= 28A
= 25°C, I
= 25°C, I
= 28A, L = 0.70mH
= 2.5
= 0V, I
= 10V, I
= V
= 25V, I
= 100V, V
= 80V, V
= 20V
= -20V
= 80V
= 10V, See Fig. 6 and 13
= 50V
= 10V, See Fig. 10 „
= 0V
= 25V
V
2%.
(BR)DSS
GS
J
, I
= 175°C .
D
S
F
D
D
D
Conditions
= 250µA
Conditions
GS
= 28A
= 28A, V
,
=28A
= 250µA
= 28A„
GS
„
= 0V, T
= 0V
D
www.irf.com
„
GS
= 1mA
J
= 150°C
= 0V
G
G
S
„
+L
D
S
D
)
S
D