IRF3710PBF International Rectifier, IRF3710PBF Datasheet - Page 4

• Manufacturer Part Number: IRF3710PBF
• Description: MOSFET N-CH 100V 57A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF3710PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 23 mOhm @ 28A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 57A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 130nC @ 10V
• Input Capacitance (ciss) @ Vds: 3130pF @ 25V
• Power - Max: 200W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Current, Drain: 7.3 A
• Gate Charge, Total: 34 nC
• Package Type: SO-8
• Polarization: N-Channel
• Power Dissipation: 2.5 W
• Resistance, Drain To Source On: 18 Milliohms
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 10 ns
• Time, Turn-on Delay: 8.7 ns
• Transconductance, Forward: 11 S
• Voltage, Breakdown, Drain To Source: 100 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 57 A
• Mounting Style: Through Hole
• Gate Charge Qg: 86.7 nC
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.023Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF3710PBF

100000
1000.00
10000
4
100.00
1000
10.00
100
1.00
0.10
10
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
0.0
Drain-to-Source Voltage
T J = 175°C
V DS , Drain-to-Source Voltage (V)
V SD , Source-toDrain Voltage (V)
Forward Voltage
0.5
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
T J = 25°C
10
1.0
Coss
Ciss
Crss
f = 1 MHZ
1.5
V GS = 0V
SHORTED
2.0
100
1000
100
0.1
10
Fig 8. Maximum Safe Operating Area
12
10
1
7
5
2
0
0
1
Fig 6. Typical Gate Charge Vs.
I
D
Tc = 25°C
Tj = 175°C
Single Pulse
=
28A
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
20
Q , Total Gate Charge (nC)
G
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
40
V
V
V
DS
DS
DS
60
= 80V
= 50V
= 20V
100
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100µsec
10msec
1msec
80
1000
100