IRF3710PBF International Rectifier, IRF3710PBF Datasheet - Page 5

MOSFET N-CH 100V 57A TO-220AB

IRF3710PBF

Manufacturer Part Number
IRF3710PBF
Description
MOSFET N-CH 100V 57A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheets

Specifications of IRF3710PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
23 mOhm @ 28A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
57A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
130nC @ 10V
Input Capacitance (ciss) @ Vds
3130pF @ 25V
Power - Max
200W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Current, Drain
7.3 A
Gate Charge, Total
34 nC
Package Type
SO-8
Polarization
N-Channel
Power Dissipation
2.5 W
Resistance, Drain To Source On
18 Milliohms
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
10 ns
Time, Turn-on Delay
8.7 ns
Transconductance, Forward
11 S
Voltage, Breakdown, Drain To Source
100 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
57 A
Mounting Style
Through Hole
Gate Charge Qg
86.7 nC
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.023Ohm
Drain-source On-volt
100V
Gate-source Voltage (max)
±20V
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRF3710PBF

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0.01
0.1
60
50
40
30
20
10
0.00001
0
1
25
Fig 9. Maximum Drain Current Vs.
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.20
0.10
0.05
0.02
0.01
50
T , Case Temperature
Case Temperature
C
75
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
100
125
( C)
°
150
t , Rectangular Pulse Duration (sec)
1
0.001
175
V
90%
10%
V
DS
GS
0.01
t
d(on)
1. Duty factor D =
2. Peak T
Notes:
t
r
J
= P
DM
x Z
t / t
1
0.1
thJC
P
2
t
d(off)
DM
+ T
C
t
1
t
f
t
2
+
-
5
1

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