IRF3710PBF International Rectifier, IRF3710PBF Datasheet - Page 3

• Manufacturer Part Number: IRF3710PBF
• Description: MOSFET N-CH 100V 57A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF3710PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 23 mOhm @ 28A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 57A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 130nC @ 10V
• Input Capacitance (ciss) @ Vds: 3130pF @ 25V
• Power - Max: 200W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Current, Drain: 7.3 A
• Gate Charge, Total: 34 nC
• Package Type: SO-8
• Polarization: N-Channel
• Power Dissipation: 2.5 W
• Resistance, Drain To Source On: 18 Milliohms
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 10 ns
• Time, Turn-on Delay: 8.7 ns
• Transconductance, Forward: 11 S
• Voltage, Breakdown, Drain To Source: 100 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 57 A
• Mounting Style: Through Hole
• Gate Charge Qg: 86.7 nC
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.023Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF3710PBF

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1000.00
100.00
10.00
Fig 3. Typical Transfer Characteristics
1000
Fig 1. Typical Output Characteristics
1.00
0.10
100
0.1
10
1
0.1
3.0
TOP
BOTTOM 3.5V
T J = 175°C
4.0
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
VGS
16V
10V
7.0V
6.0V
5.0V
4.5V
4.0V
T J = 25°C
5.0
1
20µs PULSE WIDTH
Tj = 25°C
6.0
V DS = 15V
20µs PULSE WIDTH
3.5V
7.0
10
8.0
100
9.0
1000
100
0.1
10
1
Fig 2. Typical Output Characteristics
0.1
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Fig 4. Normalized On-Resistance
TOP
BOTTOM 3.5V
-60
I
D
-40
=
V DS , Drain-to-Source Voltage (V)
57A
VGS
-20
16V
10V
7.0V
6.0V
5.0V
4.5V
4.0V
T , Junction Temperature
J
Vs. Temperature
0
1
20
40
20µs PULSE WIDTH
Tj = 175°C
60
80
3.5V
10
100 120 140 160 180
( C)
V
°
GS
=
10V
3
100