STP60NF10 STMicroelectronics, STP60NF10 Datasheet

MOSFET N-CH 100V 80A TO-220

STP60NF10

Manufacturer Part Number
STP60NF10
Description
MOSFET N-CH 100V 80A TO-220
Manufacturer
STMicroelectronics
Series
STripFET™r
Type
Power MOSFETr
Datasheet

Specifications of STP60NF10

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
23 mOhm @ 40A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
104nC @ 10V
Input Capacitance (ciss) @ Vds
4270pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.023 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
78 S
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
80 A
Power Dissipation
300000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
40A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
19mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.023Ohm
Drain-source On-volt
100V
Gate-source Voltage (max)
±20V
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4384-5

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Order codes
General features
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET™ process
has specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC
converters for Telecom and Computer
applications. It is also intended for any
applications with low gate drive requirements.
Applications
September 2006
STB60NF10-1
Exceptional dv/dt capability
100% avalanche tested
Switching application
STB60NF10
STP60NF10
Type
STB60NF10T4
STB60NF10-1
Part number
STP60NF10
N-channel 100V - 0.019Ω - 80A - TO-220 - D
(@Tjmax)
V
100V
100V
100V
DSS
<0.023Ω
<0.023Ω
<0.023Ω
R
DS(on)
B60NF10
B60NF10
P60NF10
Marking
80A
80A
80A
I
D
STB60NF10-1 - STP60NF10
Rev 4
Internal schematic diagram
STripFET™ II Power MOSFET
D²PAK
Package
TO-220
D²PAK
I²PAK
1
3
I²PAK
STB60NF10
1 2
3
2
PAK - I
Tape & reel
Packaging
Tube
Tube
TO-220
www.st.com
2
PAK
1
2
3
1/15
15

Related parts for STP60NF10

STP60NF10 Summary of contents

Page 1

... It is also intended for any applications with low gate drive requirements. Applications ■ Switching application Order codes Part number STB60NF10T4 STB60NF10-1 STP60NF10 September 2006 STB60NF10-1 - STP60NF10 STripFET™ II Power MOSFET R I DS(on) D <0.023Ω 80A <0.023Ω 80A D²PAK <0.023Ω ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/ STB60NF10 - STB60NF10 -1 - STP60NF10 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ...

Page 3

... STB60NF10 - STB60NF10 -1 - STP60NF10 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS (1) I Drain current (continuous Drain current (continuous (2) I Drain current (pulsed Total dissipation at T TOT Derating factor (3) dv/dt Peak diode recovery voltage slope (4) E Single pulse avalanche energy ...

Page 4

... Input capacitance iss Output capacitance C oss Reverse transfer C rss capacitance Q Total gate charge g Q Gate-source charge gs Gate-drain charge Pulsed: pulse duration=300µs, duty cycle 1.5% 4/15 STB60NF10 - STB60NF10 -1 - STP60NF10 Parameter Test conditions I = 250µ Max rating Max rating @125° ±20V ...

Page 5

... STB60NF10 - STB60NF10 -1 - STP60NF10 Table 5. Switching times Symbol t d(on) Turn-on delay time t Rise time r t Turn-off delay time d(off) Fall time t f Table 6. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge ...

Page 6

... Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 3. Output characterisics Figure 5. Transconductance 6/15 STB60NF10 - STB60NF10 -1 - STP60NF10 Figure 2. Thermal impedance Figure 4. Transfer characteristics Figure 6. Static drain-source on resistance ...

Page 7

... STB60NF10 - STB60NF10 -1 - STP60NF10 Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Figure 11. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 10. Normalized on resistance vs temperature Figure 12. Normalized B VDSS vs temperature 7/15 ...

Page 8

... Figure 13. Switching times test circuit for resistive load Figure 15. Test circuit for inductive load switching and diode recovery times Figure 17. Unclamped inductive waveform 8/15 STB60NF10 - STB60NF10 -1 - STP60NF10 Figure 14. Gate charge test circuit Figure 16. Unclamped Inductive load test circuit Figure 18. Switching time waveform ...

Page 9

... STB60NF10 - STB60NF10 -1 - STP60NF10 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label ...

Page 10

... STB60NF10 - STB60NF10 -1 - STP60NF10 inch MIN. TYP. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.147 0.104 MAX ...

Page 11

... STB60NF10 - STB60NF10 -1 - STP60NF10 DIM TO-262 (I PAK) MECHANICAL DATA mm. MIN. TYP MAX. 4.40 4.60 2.40 2.72 0.61 0.88 1.14 1.70 0.49 0.70 1.23 1.32 8.95 9.35 2.40 2.70 4.95 5.15 10 10. 3.50 3.93 1.27 1.40 Package mechanical data inch MIN. TYP. MAX. ...

Page 12

... Package mechanical data DIM 12/15 STB60NF10 - STB60NF10 -1 - STP60NF10 2 D PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. MIN. TYP MAX. 4.4 4.6 2.49 2.69 0.03 0.23 0.7 0.93 1.14 1.7 0.45 0.6 1.23 1.36 8.95 9. 10.4 8.5 4.88 5.28 15 15.85 1.27 1.4 1.4 1 ...

Page 13

... STB60NF10 - STB60NF10 -1 - STP60NF10 5 Packaging mechanical data 2 D PAK FOOTPRINT TAPE MECHANICAL DATA mm DIM. MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5 ...

Page 14

... Revision history 6 Revision history Table 7. Revision history Date 30-May-2005 30-Nov-2005 28-Jul-2006 18-Sep-2006 14/15 STB60NF10 - STB60NF10 -1 - STP60NF10 Revision 1 First release 2 Added package D²PAK 3 New template, SOA updated 4 Added I²PAK Changes ...

Page 15

... STB60NF10 - STB60NF10 -1 - STP60NF10 Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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