STP120NF10 STMicroelectronics, STP120NF10 Datasheet - Page 5

• Manufacturer Part Number: STP120NF10
• Description: MOSFET N-CH 100V 110A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r
• Type: Power MOSFETr

Specifications of STP120NF10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 10.5 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 110A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 233nC @ 10V
• Input Capacitance (ciss) @ Vds: 5200pF @ 25V
• Power - Max: 312W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0105 Ohms
• Forward Transconductance Gfs (max / Min): 90 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 312 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.0105Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4118-5

STB/F/PW120NF10
Table 6.
Table 7.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
I
d(on)
d(off)
RRM
I
SD
Q
SD
t
t
t
rr
r
f
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
Doc ID 9522 Rev 7
I
I
di/dt = 100 A/µs,
V
(see Figure 20)
V
R
(see Figure 15)
SD
SD
DD
DD
G
=4.7 Ω, V
=120 A, V
=120 A,
=40 V, Tj=150 °C
Test conditions
=50 V, I
Test conditions
D
= 60 A,
GS
GS
=0
=10 V
Electrical characteristics
Min.
Min.
-
-
-
-
-
Typ.
Typ.
152
760
132
10
25
90
68
Max.
Max.
110
440
1.3
-
Unit
Unit
nC
ns
ns
ns
ns
ns
A
A
V
A
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