STP200NF03 STMicroelectronics, STP200NF03 Datasheet - Page 9

• Manufacturer Part Number: STP200NF03
• Description: MOSFET N-CH 30V 120A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP200NF03

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.6 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 140nC @ 10V
• Input Capacitance (ciss) @ Vds: 4950pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 60A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 3.2mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0032 Ohms
• Forward Transconductance Gfs (max / Min): 200 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6738-5; STP200NF03

STP200NF03 - STB200NF03 - STB200NF03-1
The previous curve gives the safe operating area for unclamped inductive loads, single
pulse or repetitive, under the following conditions:
P
E
Where:
I
P
t
To de rate above 25
I
Where:
Z
equal to T
AV
AV
AV
th
D(AVE)
AS(AR)
D(AVE)
is the Allowable Current in Avalanche
is the Time in Avalanche
= 2 * (T
= K * R
= 0.5 * (1.3 * BV
is the Average Power Dissipation in Avalanche (Single Pulse)
= P
AV
th
jmax
D(AVE)
.
is the value coming from Normalized Thermal Response at fixed pulse width
- T
CASE
* t
AV
o
C, at fixed I
)/ (1.3 * BV
DSS
* I
AV
AV
)
DSS
, the following equation must be applied:
* Z
th
)
Electrical characteristics
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