STP80PF55 STMicroelectronics, STP80PF55 Datasheet - Page 5

• Manufacturer Part Number: STP80PF55
• Description: MOSFET P-CH 55V 80A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r
• Type: Power MOSFETr

Specifications of STP80PF55

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 18 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 258nC @ 10V
• Input Capacitance (ciss) @ Vds: 5500pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.018Ohm
• Drain-source On-volt: 55V
• Gate-source Voltage (max): ±16V
• Drain Current (max): 80A
• Power Dissipation: 300W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.018 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 32 S
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 80 A
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2729-5

STB80PF55, STP80PF55
Note:
Table 7.
1. Pulse width limited by Tjmax .
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5 %.
For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
Symbol
I
V
SDM
I
SD
RRM
I
Q
SD
t
rr
rr
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
Doc ID 8177 Rev 6
I
I
V
SD
SD
DD
= 80 A, V
= 80 A, di/dt = 100 A/µs
Test condictions
= 25 V, T
GS
j
=150 °C
= 0
Electrical characteristics
Min.
-
-
-
Typ.
110
495
9
Max.
1.6
10
40
Unit
µC
ns
A
A
V
A
5/16