STF30N65M5 STMicroelectronics, STF30N65M5 Datasheet - Page 8

• Manufacturer Part Number: STF30N65M5
• Description: MOSFET N-CH 650V 22A TO-220FP
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STF30N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 139 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 64nC @ 10V
• Input Capacitance (ciss) @ Vds: 2880pF @ 100V
• Power - Max: 30W
• Mounting Type: Through Hole
• Package / Case: TO-220FP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical characteristics
1. Eon including reverse recovery of a SiC diode
8/18
Figure 14. Normalized gate threshold voltage
Figure 16. Source-drain diode forward
Figure 18. Switching losses vs gate resistance
(norm)
V
GS(th)
1.00
0.80
0.70
1.10
0.90
(V)
V
1.2
1.0
0.2
0.8
0.6
0.4
(µJ)
250
200
150
100
300
SD
-50
0
50
E
0
0
0
vs temperature
characteristics
(1)
-25
T
J
=150°C
V
V
10
I
CL
D
GS
=14A
10
=400V
0
=10V
T
J
=-50°C
20
25
20
50
30
75
30
40
100
Eon
T
J
=25°C
40
50
T
J
Eoff
I
(°C)
SD
Doc ID 15331 Rev 2
AM05475v1
AM05473v1
AM05472v1
(A)
R
G
(Ω)
Figure 15. Normalized on resistance vs
Figure 17. Normalized B
(norm)
(norm)
R
BV
DS(on)
1.07
1.03
0.99
0.97
0.95
1.05
1.01
0.93
DSS
1.5
1.3
1.1
0.9
0.7
0.5
2.1
1.9
1.7
-50
-50
temperature
-25
-25
0
0
25
25
50
VDSS
50
STB/F/I/P/W30N65M5
75
75
vs temperature
100
100
125
T
J
(°C)
AM05474v1
AM05467v1
T
J
(°C)