IXTK120N25

Manufacturer Part NumberIXTK120N25
DescriptionMOSFET N-CH 250V 120A TO-264
ManufacturerIXYS
SeriesMegaMOS™
IXTK120N25 datasheet
 


Specifications of IXTK120N25

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs20 mOhm @ 500mA, 10VDrain To Source Voltage (vdss)250V
Current - Continuous Drain (id) @ 25° C120AVgs(th) (max) @ Id4V @ 250µA
Gate Charge (qg) @ Vgs360nC @ 10VInput Capacitance (ciss) @ Vds7700pF @ 25V
Power - Max730WMounting TypeThrough Hole
Package / CaseTO-264AAConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.02 Ohms
Drain-source Breakdown Voltage250 VGate-source Breakdown Voltage+/- 20 V
Continuous Drain Current120 APower Dissipation730 W
Maximum Operating Temperature+ 150 CMounting StyleThrough Hole
Minimum Operating Temperature- 55 CVdss, Max, (v)250
Id(cont), Tc=25°c, (a)120Rds(on), Max, Tj=25°c, (?)0.018
Ciss, Typ, (pf)9400Qg, Typ, (nc)400
Trr, Typ, (ns)350Pd, (w)560
Rthjc, Max, (k/w)0.22Package StyleTO-264
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
Page 1/5

Download datasheet (579Kb)Embed
Next
High Current
MegaMOS
FET
TM
N-Channel Enhancement Mode
Preliminary Data Sheet
Symbol
Test conditions
V
T
= 25°C to 150°C
DSS
J
V
T
= 25°C to 150°C; R
DGR
J
GS
V
Continuous
GS
V
Transient
GSM
I
T
= 25°C MOSFET chip capability
D25
C
I
External lead current limit
D(RMS)
I
T
= 25°C, pulse width limited by T
DM
C
I
T
= 25°C
AR
C
E
T
= 25°C
AR
C
E
T
= 25°C
AS
C
dv/dt
I
≤ I
, di/dt ≤ 100 A/µs, V
S
DM
T
≤ 150°C, R
= 2 Ω
J
G
P
T
= 25°C
D
C
T
J
T
JM
T
stg
T
1.6 mm (0.063 in.) from case for 10 s
L
M
Mounting torque
d
Weight
TO-264
Symbol
Test Conditions
(T
= 25°C unless otherwise specified)
J
V
V
= 0 V, I
= 1 mA
DSS
GS
D
V
V
= V
, I
= 250 µA
GS(th)
DS
GS
D
I
V
= ±20 V DC, V
= 0
GSS
GS
DS
I
V
= V
DSS
DS
DSS
V
= 0 V
GS
R
V
= 10 V, I
= 0.5 I
DS(on)
GS
D
D25
Pulse test, t ≤ 300 ms, duty cycle d ≤ 2%
© 2003 IXYS All rights reserved
IXTK 120N25
Maximum ratings
250
= 1.0 MΩ
250
±20
±30
120
75
480
JM
90
80
4.0
≤ V
10
DD
DSS
730
-55 ... +150
150
-55 ... +150
300
0.7/6
10
Characteristic Values
Min. Typ.
250
2.0
4.0
±200
T
= 25°C
J
T
= 125°C
J
V
= 250
DSS
I
= 120
D25
20 mΩ Ω Ω Ω Ω
=
R
DS(on)
TO-264 AA (IXTK)
V
V
V
V
G
A
D
A
S
A
A
G = Gate
D
= Drain
S = Source
Tab = Drain
mJ
J
V/ns
W
° C
° C
° C
Features
° C
Low R
HDMOS
TM
Nm/lb.in.
DS (on)
Rugged polysilicon gate cell structure
g
International standard package
Fast switching times
Applications
Motor controls
Max.
DC choppers
Switched-mode power supplies
V
Advantages
V
nA
Easy to mount with one screw
(isolated mounting screw hole)
50
µA
Space savings
3 mA
High power density
20 mΩ
V
A
D (TAB)
process
DS98879D(11/03)

IXTK120N25 Summary of contents

  • Page 1

    ... V DC GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 ms, duty cycle d ≤ 2% © 2003 IXYS All rights reserved IXTK 120N25 Maximum ratings 250 = 1.0 MΩ 250 ±20 ±30 120 75 480 4.0 ≤ DSS 730 -55 ... +150 150 -55 ... +150 300 ...

  • Page 2

    ... Pulse test, t ≤ 300 µs, duty cycle d ≤ 25A, -di/dt = 100 A/µ IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXYS reserves the right to change limits, test conditions, and dimensions. Characteristic values Min ...

  • Page 3

    ... Norm alized to I DS(on) Value vs 10V 2 1.8 1.6 1 100 120 140 160 180 200 220 I - Amperes D © 2003 IXYS All rights reserved 220 200 180 160 140 120 100 1.5 2 2.5 2.6 2.4 7V 2.2 6V 1.8 1.6 5V 1.4 1.2 0.8 0.6 ...

  • Page 4

    ... T = 125º 25º 0.4 0.6 0 Volts S D Fig. 11. Capacitance 10000 1000 f = 1MHz 100 Volts D S IXYS reserves the right to change limits, test conditions, and dimensions. 140 120 100 5 1.2 1.4 1000 C iss 100 C oss 10 C rss ...

  • Page 5

    ... IXYS All rights reserved Fig . 13. M axim tan Puls e W idth - millis ec onds IXTK 120N25 ...