2SK2221-E

Manufacturer Part Number2SK2221-E
DescriptionMOSFET N-CH 200V 8A TO-3P
ManufacturerRenesas Electronics America
2SK2221-E datasheet
 

Specifications of 2SK2221-E

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Drain To Source Voltage (vdss)200VCurrent - Continuous Drain (id) @ 25° C8A
Input Capacitance (ciss) @ Vds600pF @ 10VPower - Max100W
Mounting TypeThrough HolePackage / CaseTO-3P
Lead Free Status / RoHS StatusLead free / RoHS CompliantGate Charge (qg) @ Vgs-
Vgs(th) (max) @ Id-Rds On (max) @ Id, Vgs-
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To our customers,
Old Company Name in Catalogs and Other Documents
st
On April 1
, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Renesas Electronics website:
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
http://www.renesas.com
st
April 1
, 2010
Renesas Electronics Corporation

2SK2221-E Summary of contents

  • Page 1

    To our customers, Old Company Name in Catalogs and Other Documents st On April 1 , 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the ...

  • Page 2

    All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm ...

  • Page 3

    ... Silicon N Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 Features High power gain Excellent frequency response High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) Rev ...

  • Page 4

    ... Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature ° Note: 1. Value Electrical Characteristics Item Drain to source 2SK2220 breakdown voltage 2SK2221 Gate to source breakdown voltage ...

  • Page 5

    ... Typical Transfer Characteristics Gate to Source Voltage V Rev.2.00 Sep 07, 2005 page 100 150 (° ° ( (V) GS Maximum Safe Operation Area 25° 1.0 0.5 2SK2220 2SK2221 0 100 200 Drain to Source Voltage V (V) DS Typical Output Characteristics ° Drain to Source Voltage V (V) DS Typical Transfer Characteristics 1 ...

  • Page 6

    ... Forward Transfer Admittance vs. Frequency 5 1 25°C 0 0.01 0.001 0.0005 100 k Frequency f (Hz) Switching Time Test Circuit Input µs 50 Ω duty ratio = 1% Rev.2.00 Sep 07, 2005 page Output Switching Time vs. Drain Current 500 t on 200 100 50 t off 0.1 0.2 0.5 1 ...

  • Page 7

    ... Max 5.45 ± 0.5 Ordering Information Part Name 2SK2220-E 360 pcs 2SK2221-E 360 pcs Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page Package Name MASS[Typ ...

  • Page 8

    Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...