BSS84PW L6327 Infineon Technologies, BSS84PW L6327 Datasheet - Page 4

• Manufacturer Part Number: BSS84PW L6327
• Description: MOSFET P-CH 60V 150MA SOT-323
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS84PW L6327

• Package / Case: SOT-323
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 Ohm @ 150mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 150mA
• Vgs(th) (max) @ Id: 2V @ 20µA
• Gate Charge (qg) @ Vgs: 1.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 19.1pF @ 25V
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 8 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.15 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000247312

Power Dissipation
P
Safe operating area
I
parameter : D = 0 , T
D
tot
= f ( V
-10
-10
-10
-10
-10
0.32
0.24
0.20
0.16
0.12
0.08
0.04
0.00
= f ( T
W
A
Rev 1.3
-1
-2
-3
1
0
-10
0
BSS84PW
BSS84PW
DS
-1
A
20
)
)
40
-10
60
0
A
= 25 °C
80
100
-10
120
1
°C
DC
V
T
V
t p = 40.0µs
A
DS
160
100 µs
1 ms
10 ms
-10
Page 4
2
Drain current
I
parameter: V
Transient thermal impedance
Z
parameter : D = t
D
thJA
= f ( T
K/W
-0.16
-0.12
-0.10
-0.08
-0.06
-0.04
-0.02
0.00
10
10
10
10
A
= f ( t
3
2
1
0
10
0
A
BSS84PW
BSS84PW
-5
)
p
20
10
)
single pulse
-4
GS
40
10
³
p
-3
/ T
10 V
60
10
-2
80
10
-1
100
10
0
BSS84PW
120
2006-12-05
10
D = 0.50
1
°C
0.20
0.10
0.05
0.02
0.01
T
t
p
s
A
160
10
3