BSS84PW L6327 Infineon Technologies, BSS84PW L6327 Datasheet - Page 7

• Manufacturer Part Number: BSS84PW L6327
• Description: MOSFET P-CH 60V 150MA SOT-323
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS84PW L6327

• Package / Case: SOT-323
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 Ohm @ 150mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 150mA
• Vgs(th) (max) @ Id: 2V @ 20µA
• Gate Charge (qg) @ Vgs: 1.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 19.1pF @ 25V
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 8 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.15 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000247312

Avalanche energy
E
par.: I
Drain-source breakdown voltage
V
AS
(BR)DSS
mJ
Rev 1.3
= f ( T
-72
-68
-66
-64
-62
-60
-58
-56
-54
3.0
2.0
1.5
1.0
0.5
0.0
V
D
-60
25
BSS84PW
= -0.15 A , V
j
= f ( T
)
45
-20
j
)
65
20
DD
85
60
= -25 V, R
105
100
125
°C
GS
°C
T
T
= 25
j
j
165
180
W
Page 7
Typ. gate charge
V
parameter: I
GS
-16
-12
-10
= f ( Q
V
-8
-6
-4
-2
0
0.0
BSS84PW
0.2
Gate
D
= -0.15 A pulsed
)
0.4
0,2
V
0.6
DS max
0.8
1.0
0,8 V
BSS84PW
2006-12-05
DS max
1.2
nC
Q
Gate
1.5