BSS127 H6327 Infineon Technologies, BSS127 H6327 Datasheet - Page 6

• Manufacturer Part Number: BSS127 H6327
• Description: MOSFET N-CH 600V 0.021 A SOT23
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS127 H6327

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 500 Ohm @ 16mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 21mA
• Vgs(th) (max) @ Id: 2.6V @ 8µA
• Gate Charge (qg) @ Vgs: 1nC @ 10V
• Input Capacitance (ciss) @ Vds: 28pF @ 25V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev. 1.47
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
1000
900
800
700
600
500
400
300
200
100
10
10
10
10
DS
=f(T
0
-1
2
1
0
-60
); V
0
j
); I
GS
D
=0 V; f =1 MHz; T
-20
=0.016 A; V
5
20
98 %
10
V
T
GS
DS
j
60
[°C]
=10 V
typ
[V]
j
=25°C
15
Ciss
100
Crss
Coss
20
140
180
page 6
25
10 Typ. gate threshold voltage
V
parameter: I
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
10
10
10
3.5
2.5
1.5
0.5
=f(T
SD
3
2
1
0
-1
-2
-3
-60
)
0
j
); V
D
j
0.4
DS
-20
150 °C
=V
GS
0.8
; I
20
25 °C
D
=8 µA
1.2
V
T
j
SD
60
150 °C, 98%
min
[°C]
typ
[V]
max
1.6
100
25 °C, 98%
2
140
2.4
BSS127
2010-07-29
180
2.8