BSS139 L6327 Infineon Technologies, BSS139 L6327 Datasheet - Page 4

• Manufacturer Part Number: BSS139 L6327
• Description: MOSFET N-CH 250V 100MA SOT-23
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS139 L6327

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Depletion Mode
• Rds On (max) @ Id, Vgs: 14 Ohm @ 0.1mA, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 100mA
• Vgs(th) (max) @ Id: 1V @ 56µA
• Gate Charge (qg) @ Vgs: 3.5nC @ 5V
• Input Capacitance (ciss) @ Vds: 76pF @ 25V
• Power - Max: 360mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 100 Ohm @ 0 V
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.04 A
• Power Dissipation: 360 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000247295

Rev. 1.62
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
10
10
10
10
0.4
0.3
0.2
0.1
10
0
DS
-1
-2
-3
-4
0
A
10
0
); T
)
0
limited by on-state
resistance
A
p
=25 °C; D =0
40
10
1
T
V
A
DS
80
[°C]
[V]
10
100 µs
1 ms
10 ms
2
DC
120
10 µs
160
10
page 4
3
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJA
=f(T
0.12
0.08
0.04
=f(t
10
10
10
10
A
0
3
2
1
0
); V
10
0
p
)
0.01
-4
0.02
0.05
0.5
GS
0.2
0.1
≥10 V
10
p
single pulse
/T
-3
40
10
-2
T
t
A
10
p
80
[°C]
[s]
-1
10
0
120
10
BSS139
1
2006-11-27
160
10
2