BSS139 L6327 Infineon Technologies, BSS139 L6327 Datasheet - Page 7

• Manufacturer Part Number: BSS139 L6327
• Description: MOSFET N-CH 250V 100MA SOT-23
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS139 L6327

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Depletion Mode
• Rds On (max) @ Id, Vgs: 14 Ohm @ 0.1mA, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 100mA
• Vgs(th) (max) @ Id: 1V @ 56µA
• Gate Charge (qg) @ Vgs: 3.5nC @ 5V
• Input Capacitance (ciss) @ Vds: 76pF @ 25V
• Power - Max: 360mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 100 Ohm @ 0 V
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.04 A
• Power Dissipation: 360 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000247295

Rev. 1.62
13 Forward characteristics of reverse diode
I
parameter: T
16 Drain-source breakdown voltage
V
F
=f(V
BR(DSS)
0.001
0.01
300
280
260
240
220
0.1
SD
1
-60
=f(T
)
0
j
); I
j
-20
D
=250 µA
0.4
150 °C
20
V
T
SD
j
0.8
60
[°C]
25 °C
[V]
150 °C, 98%
100
25 °C, 98%
1.2
140
180
1.6
page 7
15 Typ. gate charge
V
parameter: V
GS
=f(Q
-2
-4
8
6
4
2
0
0
gate
); I
DD
D
=0.1 A pulsed
1
Q
0.2 VDS(max)
gate
[nC]
2
0.5 VDS(max)
0.8 VDS(max)
BSS139
2006-11-27
3