SPD09P06PL G Infineon Technologies, SPD09P06PL G Datasheet

SPD09P06PL G

Manufacturer Part Number

SPD09P06PL G

Description

MOSFET P-CH 60V 9.7A TO252-3

Manufacturer

Infineon Technologies

Series

SIPMOS®r

Datasheet

1.SPD09P06PL_G.pdf (9 pages)

Specifications of SPD09P06PL G

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

250 mOhm @ 6.8A, 10V

Drain To Source Voltage (vdss)

60V

Current - Continuous Drain (id) @ 25° C

9.7A

Vgs(th) (max) @ Id

2V @ 250µA

Gate Charge (qg) @ Vgs

21nC @ 10V

Input Capacitance (ciss) @ Vds

450pF @ 25V

Power - Max

42W

Mounting Type

Surface Mount

Package / Case

DPak, TO-252 (2 leads+tab), SC-63

Configuration

Single

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

0.25 Ohms

Drain-source Breakdown Voltage

- 60 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

9.7 A

Power Dissipation

42 W

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Fall Time

89 ns

Minimum Operating Temperature

- 55 C

Rise Time

168 ns

Package

DPAK (TO-252)

Vds (max)

-60.0 V

Rds (on) (max) (@10v)

250.0 mOhm

Rds (on) (max) (@4.5v)

Rds (on) (max) (@2.5v)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

SP000443928

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• P-channel

• Enhancement mode

• Logic Level

• 175°C operating temperature

• Avalanche rated

• dv/dt rated

• Pb-free lead plating; RoHS compliant

Feature

SIPMOS     = = = = Power-Transistor

Type

SPD09P06PL G

Maximum Ratings,at T

Parameter

Continuous drain current

Pulsed drain current

Avalanche energy, single pulse

Avalanche energy, periodic limited by T

Reverse diode dv/dt

Gate source voltage

Power dissipation

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

Enhancement mode

Logic Level prueb

1 75°C operating temperature

Avalanche rated

dv/dt rated

P-Channel

=-9.7A, V

=-9.7 A , V

=25°C

=100°C

=25°C

Rev 2.5

=-48, di/dt=200A/µs, T

=-25V, R

Package

PG-TO252-3

=25

= 25 °C, unless otherwise specified

jmax

=175°C

Yes

Lead free

jmax

Page 1

Symbol

dv/dt

D puls

j ,

tot

stg

-55... +175

55/175/56

Product Summary

Value

-38.8

DS(on)

-9.7

-6.8

±20

4.2

PG-TO252-3

SPD09P06PL G

Gate

pin1

2008-07-29

0.25

-9.7

-60

Unit

kV/µs

°C

Source

pin 3

Drain

pin 2

Related parts for SPD09P06PL G

SPD09P06PL G Summary of contents

Page 1

... T C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev 2.5 Lead free Yes = 25 °C, unless otherwise specified Symbol puls E E jmax dv/dt =175°C jmax Page 1 SPD09P06PL G Product Summary DS(on PG-TO252-3 Gate pin1 Value -9.7 -6.8 -38 4 ± ...

Page 2

... Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev 2.5 Symbol R thJC R thJA R thJA = 25 °C, unless otherwise specified j Symbol V (BR)DSS = V V GS(th DSS I GSS R DS(on) R DS(on) Page 2 SPD09P06PL G Values Unit min. typ. max 3.6 K 100 - - Values Unit min. typ. max. - ...

Page 3

... V =-4.5V d(on =-5. =-30V, V =-4.5V =-5.4A d(off =-48V, I =-9. =-48V, I =-9.7A -10V =-48V, I =-9.7A (plateau =25° =0V, I =-9. =-30V /dt=100A/µ Page 3 SPD09P06PL G Values min. typ. max. 1.8 3 360 450 - 103 130 - 168 252 - 134 - 1 5 -38.8 - -1.1 -1 2008-07-29 Unit ...

Page 4

... C 2 SPD09P06PL - -10 0 - -10 -10 Rev 2.5 2 Drain current parameter °C 190 Transient thermal impedance thJC parameter : K 11.0µ 100 µ - Page 4 SPD09P06PL SPD09P06PL 100 120 140 160 ) SPD09P06PL single pulse - 2008-07-29 °C 190 0.50 0.20 0.10 0.05 0.02 0. ...

Page 5

... DS(on) parameter [V] a -2.0 b -2.5 0 -3.0 d -3.5 e -4.0 0 -4.5 g -5.0 0 -5.5 i -6.0 j -7.0 0 -8.0 e 0 Typ. forward transconductance = f(I g DS(on)max fs parameter 2.5 2 1 Page 5 SPD09P06PL SPD09P06PL [ -3.0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 -7.0 -8 -10 -12 -14 - =25° 2008-07- - ...

Page 6

... V 1.8 1.6 1.4 1.2 0.8 0.6 0.4 0.2 140 °C 100 200 Forward character. of reverse diode parameter - iss -10 C oss C rss -10 -10 - Page 6 SPD09P06PL -250 µ typ -60 - 100 ) µ SPD09P06PL °C typ 175 °C typ °C (98 175 °C (98%) ...

Page 7

... AS j par -9 - 105 15 Drain-source breakdown voltage = (BR)DSS j SPD09P06PL -72 V -68 -66 -64 -62 -60 -58 -56 -54 -60 - Rev 2.5 14 Typ. gate charge = parameter -16 V -12 -10 125 145 °C 185 T j 100 140 °C 200 T j Page 7 SPD09P06PL G ) Gate = -9.7 A pulsed D SPD09P06PL 0 max 0 max - Gate 2008-07-29 ...

Page 8

... Package outline: PG-TO252-3 Rev 2.5 page 8 SPD09P06PL G 2008-07-29 ...

Page 9

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev 2.5 (www.infineon.com ). Page 8 SPD09P06PL G 2008-07-29 ...

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