SPD09P06PL G Infineon Technologies, SPD09P06PL G Datasheet - Page 4

• Manufacturer Part Number: SPD09P06PL G
• Description: MOSFET P-CH 60V 9.7A TO252-3
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of SPD09P06PL G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 250 mOhm @ 6.8A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 9.7A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 21nC @ 10V
• Input Capacitance (ciss) @ Vds: 450pF @ 25V
• Power - Max: 42W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.25 Ohms
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9.7 A
• Power Dissipation: 42 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 89 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 168 ns
• Package: DPAK (TO-252)
• Vds (max): -60.0 V
• Rds (on) (max) (@10v): 250.0 mOhm
• Rds (on) (max) (@4.5v): -
• Rds (on) (max) (@2.5v): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000443928

1 Power dissipation
P
3 Safe operating area
I
parameter : D = 0 , T
D
tot
= f ( V
-10
-10
-10
-10
= f (T
W
A
50
40
35
30
25
20
15
10
Rev 2.5
-1
5
0
2
1
0
-10
0
SPD09P06PL
SPD09P06PL
DS
-1
C
20
)
)
40
60
-10
0
80 100 120 140 160
C
= 25 °C
-10
1
DC
V
T
V
t p = 11.0µs
°C
C
DS
100 µs
1 ms
10 ms
190
-10
Page 4
2
2 Drain current
I
parameter: V
4 Transient thermal impedance
Z
parameter : D = t
D
thJC
= f (T
K/W
10
10
10
10
10
10
-11
A
-9
-8
-7
-6
-5
-4
-3
-2
-1
= f (t
-1
-2
-3
-4
0
1
0
10
0
C
SPD09P06PL
SPD09P06PL
-7
)
20
p
10
)
single pulse
GS
-6
40
10
p
60
10 V
/T
-5
80 100 120 140 160
10
-4
SPD09P06PL G
10
-3
10
2008-07-29
-2
D = 0.50
0.20
0.10
0.05
0.02
0.01
T
t
s
p
°C
C
190
10
0