IPB22N03S4L-15 Infineon Technologies, IPB22N03S4L-15 Datasheet
IPB22N03S4L-15
Specifications of IPB22N03S4L-15
IPB22N03S4L-15INTR
SP000275308
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IPB22N03S4L-15 Summary of contents
Page 1
... IEC climatic category; DIN IEC 68-1 Rev. 2.0 IPI22N03S4L-15, IPP22N03S4L-15 Product Summary DS(on),max I D PG-TO263-3-2 Marking 4N03L15 4N03L15 4N03L15 Symbol Conditions I T =25 ° =100 ° = =25 °C D,pulse = =25 ° =25 °C tot stg page 1 IPB22N03S4L-15 30 (SMD version) 14.6 22 PG-TO262-3-1 PG-TO220-3-1 Value Unit ± -55 ... +175 °C 55/175/56 2007-03- ...
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... =10 µA GS(th = DSS T =25 ° = =125 ° = =85 ° = GSS =4 =11 A DS( SMD version SMD version page 2 IPB22N03S4L-15 IPI22N03S4L-15, IPP22N03S4L-15 Values min. typ. max 4 1.0 1 1000 = 100 - 17.5 19.8 - 17.2 19.5 - 12.7 14.9 - 12.4 14.6 Unit K µ 2007-03-09 ...
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... plateau =25 ° S,pulse = =25 ° = /dt =100 A/µ 4.9K/W the chip is able to carry 36A at 25°C. For detailed information thJC 2 (one layer, 70 µm thick) copper area for drain page 3 IPB22N03S4L-15 IPI22N03S4L-15, IPP22N03S4L-15 Values min. typ. max. - 750 = 190 - = 2 0.6 0. Unit 980 ...
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... SMD parameter 100 0 Rev. 2.0 2 Drain current 150 200 4 Max. transient thermal impedance Z = f(t thJC parameter µs 10 µs 100 µ 100 [V] page 4 IPB22N03S4L-15 IPI22N03S4L-15, IPP22N03S4L- ≥ SMD 100 T [° 0.5 0 0.1 0.05 0.01 single pulse t [s] p 150 200 2007-03-09 ...
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... DS 7 Typ. transfer characteristics parameter Rev. 2.0 6 Typ. drain-source on-state resistance R = f(I DS(on) parameter [V] 8 Typ. drain-source on-state resistance R = f(T DS(on) 22 -55 °C 25 °C 20 175 ° [V] page 5 IPB22N03S4L-15 IPI22N03S4L-15, IPP22N03S4L- °C, SMD 3 [ SMD -60 - 100 T [° 140 180 2007-03-09 ...
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... V SD Rev. 2.0 10 Typ. capacitances 100 µ 100 140 180 12 Typ. avalanche characteristics parameter: T 100 °C 0.1 0.8 1 1.2 1.4 [V] page 6 IPB22N03S4L-15 IPI22N03S4L-15, IPP22N03S4L- MHz [ j(start) 100 °C 150 ° 100 t [µs] AV Ciss Coss Crss °C 1000 2007-03-09 ...
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... Typical avalanche energy parameter 100 80 5 [° Typ. gate charge pulsed GS gate D parameter gate Rev. 2.0 14 Typ. drain-source breakdown voltage V BR(DSS 125 175 16 Gate charge waveforms s(th (th [nC] page 7 IPB22N03S4L-15 IPI22N03S4L-15, IPP22N03S4L- -60 - 100 T [° 140 180 Q gate 2007-03-09 ...
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... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 IPI22N03S4L-15, IPP22N03S4L-15 page 8 IPB22N03S4L-15 2007-03-09 ...
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... Revision History Version Rev. 2.0 IPI22N03S4L-15, IPP22N03S4L-15 Date page 9 IPB22N03S4L-15 Changes 2007-03-09 ...