IPB22N03S4L-15 Infineon Technologies, IPB22N03S4L-15 Datasheet - Page 5

• Manufacturer Part Number: IPB22N03S4L-15
• Description: MOSFET N-CH 30V 22A TO263-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPB22N03S4L-15

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14.6 mOhm @ 22A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 2.2V @ 10µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 980pF @ 25V
• Power - Max: 31W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 14.6 m Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 22 A
• Power Dissipation: 31 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPB22N03S4L-15; IPB22N03S4L-15INTR; SP000275308

Rev. 2.0
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
= f(V
= f(V
80
70
60
50
40
30
20
10
80
60
40
20
0
0
DS
GS
0
1
); T
); V
GS
j
j
DS
= 25 °C, SMD
10 V
= 6V
2
1
5 V
V
V
GS
DS
3
2
[V]
[V]
4.5 V
-55 °C
4
3
25 °C
4 V
175 °C
3.5 V
2.5 V
3 V
page 5
5
4
6 Typ. drain-source on-state resistance
R
parameter: V
8 Typ. drain-source on-state resistance
R
DS(on)
DS(on)
50
45
40
35
30
25
20
15
10
22
20
18
16
14
12
10
8
= f(I
= f(T
-60
0
D
j
); T
); I
GS
IPI22N03S4L-15, IPP22N03S4L-15
3.5 V
-20
D
j
= 25 °C, SMD
= 22 A; V
20
20
GS
T
4 V
I
D
j
40
60
= 10 V, SMD
[°C]
[A]
IPB22N03S4L-15
100
60
4.5 V
140
2007-03-09
10 V
5 V
180
80