BUZ73AL Infineon Technologies, BUZ73AL Datasheet
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Manufacturer Part Number
BUZ73AL
Description
MOSFET N-CH 200V 5.5A TO-220AB
Manufacturer
Infineon Technologies
Specifications of BUZ73AL
Package / Case
TO-220AB
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
600 mOhm @ 3.5A, 5V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
5.5A
Vgs(th) (max) @ Id
2V @ 1mA
Input Capacitance (ciss) @ Vds
840pF @ 25V
Power - Max
40W
Mounting Type
Through Hole
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.6 Ohm @ 5 V
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
5.5 A
Power Dissipation
40000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
BUZ73AL BUZ73ALIN BUZ73ALX BUZ73ALXK SP000011375
Available stocks
Manufacturer:
INFINEON/英飞凌
SIPMOS
Rev. 2.3
• N channel
• Enhancement mode
• Avalanche-rated
• Logic Level
Type
BUZ 73 AL
Maximum Ratings
Parameter
Continuous drain current
T
Pulsed drain current
T
Avalanche current,limited by T
Avalanche energy,periodic limited by T
Avalanche energy, single pulse
I
L = 3.67 mH, T
Gate source voltage
ESD-Sensitivity HBM as per MIL-STD 883
Power dissipation
T
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
D
C
C
C
= 7 A, V
= 37 ˚C
= 25 ˚C
= 25 ˚C
®
Power Transistor
DD
= 50 V, R
j
= 25 ˚C
V
200 V
DS
GS
= 25
jmax
I
5.5 A
D
Ω
jmax
R
0.6
DS(on )
Ω
Page 1
R
Symbol
I
I
I
E
E
V
P
T
T
R
D
Dpuls
AR
j
stg
AR
AS
GS
tot
thJC
thJA
Package
PG-TO220-3
Pin 1
G
55 / 150 / 56
-55 ... + 150
-55 ... + 150
Values
≤
±
Class 1
E
120
75
Pb-free
Yes
5.5
6.5
40
22
7
3.1
20
Pin 2
D
BUZ 73AL
2009-04-01
K/W
mJ
V
W
˚C
Unit
A
Pin 3
S
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BUZ73AL Summary of contents
SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Type BUZ 73 AL 200 V 5.5 A Maximum Ratings Parameter Continuous drain current ˚C C Pulsed drain current ...
Electrical Characteristics 25˚C, unless otherwise specified j Parameter Static Characteristics Drain- source breakdown voltage 0.25 mA ˚ Gate threshold voltage ...
Electrical Characteristics 25˚C, unless otherwise specified j Parameter Dynamic Characteristics Transconductance ≥ 3 DS(on)max, D Input capacitance ...
Electrical Characteristics 25˚C, unless otherwise specified j Parameter Reverse Diode Inverse diode continuous forward current ˚C C Inverse diode direct current,pulsed ˚C C Inverse diode forward voltage ...
Power dissipation = ƒ tot tot Safe operating area = ƒ parameter: D ...
Typ. output characteristics = ƒ parameter µ 40W tot ...
Drain-source on-resistance = ƒ (on) j parameter 3 1.9 Ω 1 (on) 1.4 1.2 1.0 98% 0.8 typ 0.6 0.4 0.2 0.0 -60 -20 ...
T Avalanche energy E AS parameter Ω 3. 130 mJ 110 E 100 ...
PG-TO220-3 Rev. 2.3 Page 9 BUZ 73AL 2009-04-01 ...
Rev. 2.3 Page 10 BUZ 73AL 2009-04-01 ...
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