BUZ73AL Infineon Technologies, BUZ73AL Datasheet - Page 6

• Manufacturer Part Number: BUZ73AL
• Description: MOSFET N-CH 200V 5.5A TO-220AB
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BUZ73AL

• Package / Case: TO-220AB
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 600 mOhm @ 3.5A, 5V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 5.5A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 840pF @ 25V
• Power - Max: 40W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.6 Ohm @ 5 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.5 A
• Power Dissipation: 40000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BUZ73AL; BUZ73ALIN; BUZ73ALX; BUZ73ALXK; SP000011375

Typ. output characteristics
I
parameter: t
Typ. transfer characteristics I
parameter: t
V
Rev. 2.3
D
I
D
I
DS
D
= ƒ( V
≥
2 x I
18
14
12
10
13
11
10
A
A
8
6
4
2
0
9
8
7
6
5
4
3
2
1
0
DS
0
0
D
)
P
x R
tot
p
1
p
2
= 80 µs
= 40W
= 80 µs
DS(on)max
2
4
3
k
j
l
i
h
6
g
f
4
e
D
8
5
= f ( V
6
10
d
GS
7
)
12
c
a
8
b
V GS [V]
c
d
e
f
g
h
i
j
k
l
a
b
V
V
V
GS
DS
V
10.0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
7.0
8.0
16
10
Page 6
Typ. forward transconductance g
parameter: t
V
R
g
Typ. drain-source on-resistance
R
parameter: V
fs
DS
DS (on)
DS (on)
≥
2 x I
12
10
1.8
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
S
9
8
7
6
5
4
3
2
1
0
Ω
0
0.0
D
= ƒ( I
V
V
x R
GS
GS
2.0
2.5
a
a
p
[V] =
[V] =
= 80 µs,
2
1.0
D
GS
DS(on)max
3.0
b
)
3.5
c
4
2.0
a
4.0
d
6
3.0
4.5
e
5.0
f
8
4.0
5.5
g
fs
= f
10
6.0
h
5.0
( I
BUZ 73AL
7.0
D
i
)
12
2009-04-01
6.0
8.0
j
I
D
i
I
b
D
A
g
k
10.0
e
A
k
c
f
j
d
15
h
7.5