IPB50R299CP Infineon Technologies, IPB50R299CP Datasheet
IPB50R299CP
Manufacturer Part Number
IPB50R299CP
Description
MOSFET N-CH 550V 12A TO-263
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Specifications of IPB50R299CP
Package / Case
D²Pak, TO-263 (2 leads + tab)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
299 mOhm @ 6.6A, 10V
Drain To Source Voltage (vdss)
550V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
3.5V @ 440µA
Gate Charge (qg) @ Vgs
31nC @ 10V
Input Capacitance (ciss) @ Vds
1190pF @ 100V
Power - Max
104W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.299 Ohm @ 10 V
Drain-source Breakdown Voltage
550 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
12 A
Power Dissipation
104000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
12A
Drain Source Voltage Vds
550V
On Resistance Rds(on)
299mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000236094
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IPB50R299CP
Manufacturer:
INFINEON
Quantity:
30 000
Part Number:
IPB50R299CP
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
i
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IPB50R299CP Summary of contents
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