IPB50R299CP Infineon Technologies, IPB50R299CP Datasheet

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IPB50R299CP

Manufacturer Part Number
IPB50R299CP
Description
MOSFET N-CH 550V 12A TO-263
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheets

Specifications of IPB50R299CP

Package / Case
D²Pak, TO-263 (2 leads + tab)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
299 mOhm @ 6.6A, 10V
Drain To Source Voltage (vdss)
550V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
3.5V @ 440µA
Gate Charge (qg) @ Vgs
31nC @ 10V
Input Capacitance (ciss) @ Vds
1190pF @ 100V
Power - Max
104W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.299 Ohm @ 10 V
Drain-source Breakdown Voltage
550 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
12 A
Power Dissipation
104000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
12A
Drain Source Voltage Vds
550V
On Resistance Rds(on)
299mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000236094

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPB50R299CP
Manufacturer:
INFINEON
Quantity:
30 000
Part Number:
IPB50R299CP
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev. 2.0
Features
• Lowest figure of merit R
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Pb-free lead plating; RoHS compliant
• Quailfied according to JEDEC
CoolMOS CP is designed for:
• Hard- & Softswitching SMPS topologies
• CCM PFC for Notebook adapter, PDP and large LCD power supplies
• PWM for Notebook adapter, PDP and large LCD power supplies
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche energy, repetitive t
Avalanche current, repetitive t
MOSFET dv /dt ruggedness
Gate source voltage
Power dissipation
Operating and storage temperature
CoolMOS
Type
IPB50R299CP
TM
Power Transistor
2)
j
Package
PG-TO263
=25 °C, unless otherwise specified
ON
x Q
AR
AR
1)
g
2),3)
2),3)
for target applications
Symbol Conditions
I
I
E
E
I
dv /dt
V
P
T
D
D,pulse
AR
j
AS
AR
GS
tot
, T
Marking
5R299CP
stg
T
T
T
I
I
V
static
AC (f>1 Hz)
T
D
D
page 1
C
C
C
C
DS
=4.4 A, V
=4.4 A, V
=25 °C
=100 °C
=25 °C
=25 °C
=0...400 V
DD
DD
Product Summary
V
R
Q
=50 V
=50 V
DS
DS(on),max
g,typ
@T
jmax
-55 ... 150
Value
0.44
289
±20
±30
104
4.4
12
26
50
PG-TO263
8
IPB50R299CP
0.299 Ω
550
23
Unit
A
mJ
A
V/ns
V
W
°C
V
nC
2007-11-20

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IPB50R299CP Summary of contents

Page 1

... Symbol Conditions I T =25 ° =100 ° =25 °C D,pulse =4 = 2 2), =0...400 static GS AC (f>1 Hz =25 °C tot stg page 1 IPB50R299CP @T 550 DS jmax 0.299 Ω DS(on),max 23 g,typ PG-TO263 Value 289 0.44 4.4 50 ±20 ±30 104 -55 ... 150 V nC Unit V/ °C 2007-11-20 ...

Page 2

... GS(th =500 DSS T =25 ° =500 =150 ° = GSS = =6 DS(on) T =25 ° = =6 =150 ° MHz, open drain G page 2 IPB50R299CP Value Unit 6 V/ns Values Unit min. typ. max 1.2 K 260 °C 500 - - V 2 µ 100 nA 0.299 Ω - 0.27 - 0.68 - Ω ...

Page 3

... D t =27.9 Ω R d(off =400 plateau =6 =25 ° =400 /dt =100 A/µ rrm =400V, V < <T , identical low and high side switch peak (BR)DSS j jmax oss oss page 3 IPB50R299CP Values min. typ. max. - 1190 - - 110 - - 5 0.9 1.2 - 260 - , while V is rising from DSS ...

Page 4

... D 0.5 0.2 0.1 0. 0.02 0.01 single pulse - Rev. 2.0 2 Safe operating area I =f parameter 100 125 150 175 0 10 [° Typ. output characteristics I =f parameter [s] page 4 IPB50R299CP =25 ° limited by on-state resistance 1 µs 10 µs 100 µ [V] DS =25 ° 2007-11-20 ...

Page 5

... T Rev. 2.0 6 Typ. drain-source on-state resistance R =f(I DS(on) parameter 5.5 V 1.3 1 0.9 4.5 V 0 Typ. transfer characteristics I =f parameter typ 100 140 180 0 [°C] j page 5 IPB50R299CP ); T =150 ° |>2 DS(on)max j 25 °C 150 ° [ 2007-11-20 ...

Page 6

... Forward characteristics of reverse diode I =f parameter 100 V 400 [nC] 12 Drain-source breakdown voltage V =f(T BR(DSS) 580 560 540 520 500 480 460 440 -60 125 175 [°C] j page 6 IPB50R299CP j 25 °C, 98% 150 °C, 98% 150 °C 25 °C 0.5 1 1 =0. - 100 140 T [° 180 2007-11-20 ...

Page 7

... Typ. capacitances C =f MHz Ciss 3 10 Coss Crss 100 200 V Rev. 2.0 14 Typ. Coss stored energy E = f(V oss 300 400 500 0 [V] DS page 7 IPB50R299CP ) DS 100 200 300 400 V [V] DS 500 2007-11-20 ...

Page 8

... Definition of diode switching characteristics Rev. 2.0 page 8 IPB50R299CP 2007-11-20 ...

Page 9

... PG-TO263-3-1/PG-TO263-3-4/PG-TO263-3-2: Outlines Rev. 2.0 page 9 IPB50R299CP 2007-11-20 ...

Page 10

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 page 10 IPB50R299CP 2007-11-20 ...

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