NTB30N20T4G ON Semiconductor, NTB30N20T4G Datasheet - Page 3

• Manufacturer Part Number: NTB30N20T4G
• Description: MOSFET N-CH 200V 30A D2PAK
• Manufacturer: ON Semiconductor

Specifications of NTB30N20T4G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 81 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 100nC @ 10V
• Input Capacitance (ciss) @ Vds: 2335pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.081 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 20 S
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 30 A
• Power Dissipation: 214000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTB30N20T4GOS; NTB30N20T4GOS; NTB30N20T4GOSTR

0.15
0.05
0.2
0.1
2.5
1.5
0.5
60
50
30
20
10
40
0
0
3
2
1
0
−50
0
5
Figure 3. On−Resistance versus Drain Current
I
V
D
−25
V
GS
V
GS
Figure 5. On−Resistance Variation with
= 15 A
DS
= 10 V
Figure 1. On−Region Characteristics
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
= 10 V
15
T
2
J
0
, JUNCTION TEMPERATURE (°C)
I
9 V
D
V
, DRAIN CURRENT (AMPS)
GS
T
25
J
and Temperature
T
25
= 10 V
= 100°C
T
J
Temperature
J
4
= 25°C
= −55°C
50
35
7 V
75
6
8 V
100
6 V
45
125
T
8
J
4 V
5 V
= 25°C
150
http://onsemi.com
55
NTB30N20
175
10
3
100000
10000
0.09
0.08
0.07
0.06
0.05
1000
0.1
100
60
50
30
20
10
40
10
0
0
5
0
20
Figure 4. On−Resistance versus Drain Current
V
V
Figure 6. Drain−to−Source Leakage Current
DS
T
GS
V
J
40
V
GS
= 25°C
≥ 10 V
DS
= 0 V
T
Figure 2. Transfer Characteristics
15
J
, GATE−TO−SOURCE VOLTAGE (VOLTS)
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
= 100°C
2
60
T
V
J
I
D
GS
= 25°C
, DRAIN CURRENT (AMPS)
= 10 V
and Gate Voltage
80
25
versus Voltage
T
4
J
V
100
T
= 100°C
GS
J
= 175°C
= 15 V
T
35
J
120
= −55°C
6
140
45
160
8
180
55
200
10