NTB30N20T4G ON Semiconductor, NTB30N20T4G Datasheet - Page 6

• Manufacturer Part Number: NTB30N20T4G
• Description: MOSFET N-CH 200V 30A D2PAK
• Manufacturer: ON Semiconductor

Specifications of NTB30N20T4G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 81 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 100nC @ 10V
• Input Capacitance (ciss) @ Vds: 2335pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.081 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 20 S
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 30 A
• Power Dissipation: 214000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTB30N20T4GOS; NTB30N20T4GOS; NTB30N20T4GOSTR

1000
100
0.1
10
1
0.1
0.01
1.0
0.1
V
SINGLE PULSE
T
Figure 11. Maximum Rated Forward Biased
0.00001
C
GS
V
= 25°C
DS
0.02
0.05
D = 0.5
0.1
= 20 V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0.2
1.0
SINGLE PULSE
Safe Operating Area
0.01
R
THERMAL LIMIT
PACKAGE LIMIT
DS(on)
0.0001
10
LIMIT
Figure 14. Diode Reverse Recovery Waveform
I
S
Figure 13. Thermal Response
100
0.001
SAFE OPERATING AREA
t
p
dc
10 ms
100 ms
10 ms
1 ms
http://onsemi.com
1000
NTB30N20
di/dt
t
t, TIME (ms)
a
6
P
t
(pk)
rr
0.01
t
DUTY CYCLE, D = t
b
I
500
400
300
200
100
S
t
0.25 I
0
1
25
Figure 12. Maximum Avalanche Energy versus
t
2
S
T
J
, STARTING JUNCTION TEMPERATURE (°C)
50
Starting Junction Temperature
TIME
1
0.1
/t
2
75
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
J(pk)
qJC
(t) = r(t) R
− T
100
C
= P
qJC
(pk)
1.0
1
125
R
qJC
(t)
I
D
150
= 30 A
10
175