NTB30N20T4G ON Semiconductor, NTB30N20T4G Datasheet - Page 5

• Manufacturer Part Number: NTB30N20T4G
• Description: MOSFET N-CH 200V 30A D2PAK
• Manufacturer: ON Semiconductor

Specifications of NTB30N20T4G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 81 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 100nC @ 10V
• Input Capacitance (ciss) @ Vds: 2335pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.081 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 20 S
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 30 A
• Power Dissipation: 214000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTB30N20T4GOS; NTB30N20T4GOS; NTB30N20T4GOSTR

the maximum simultaneous drain−to−source voltage and
drain current that a transistor can handle safely when it is
forward biased. Curves are based upon maximum peak
junction temperature and a case temperature (T
Peak repetitive pulsed power limits are determined by using
the thermal response data in conjunction with the procedures
discussed
Resistance−General Data and Its Use.”
traverse any load line provided neither rated peak current
(I
transition time (t
power averaged over a complete switching cycle must not
exceed (T
in switching circuits with unclamped inductive loads. For
DM
10
The Forward Biased Safe Operating Area curves define
Switching between the off−state and the on−state may
A Power MOSFET designated E−FET can be safely used
12
8
6
4
2
0
0
Figure 8. Gate−To−Source and Drain−To−Source
) nor rated voltage (V
V
DS
J(MAX)
Q
10
1
in
Voltage versus Total Charge
Q
r
,t
G
− T
f
) do not exceed 10 ms. In addition the total
20
, TOTAL GATE CHARGE (nC)
C
AN569,
)/(R
30
qJC
Q
).
Q
DSS
T
2
40
DRAIN−TO−SOURCE DIODE CHARACTERISTICS
) is exceeded and the
30
25
20
15
10
“Transient
5
0
0.5
Figure 10. Diode Forward Voltage versus Current
V
T
50
GS
J
V
= 25°C
SD
= 0 V
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
I
T
D
0.6
J
SAFE OPERATING AREA
C
= 30 A
= 25°C
60
) of 25°C.
V
Thermal
GS
http://onsemi.com
NTB30N20
70
0.7
180
150
120
90
60
30
0
5
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and adjusted for operating conditions
differing from those specified. Although industry practice is
to rate in terms of energy, avalanche energy capability is not
a constant. The energy rating decreases non−linearly with an
increase of peak current in avalanche and peak junction
temperature.
drain−to−source avalanche at currents up to rated pulsed
current (I
continuous current (I
The energy rating must be derated for temperature as shown
in the accompanying graph (Figure 12). Maximum energy at
currents below rated continuous I
equal the values indicated.
1000
100
0.8
Although many E−FETs can withstand the stress of
10
1
1
V
I
V
D
DM
DD
GS
= 30 A
t
Figure 9. Resistive Switching Time
d(off)
0.9
Variation versus Gate Resistance
t
), the energy rating is specified at rated
= 160 V
= 10 V
d(on)
t
r
R
G
D
, GATE RESISTANCE (W)
), in accordance with industry custom.
t
f
1
10
D
can safely be assumed to
100